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Número de pieza | IRLZ44ZSPBF | |
Descripción | AUTOMOTIVE MOSFET | |
Fabricantes | International Rectifier | |
Logotipo | ||
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PD - 95539
AUTOMOTIVE MOSFET
Features
l Logic Level
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
G
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
TO-220AB
IRLZ44Z
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
hEAS (Tested ) Single Pulse Avalanche Energy Tested Value
ÃIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
iMounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
kRθJC
Junction-to-Case
ikRθCS
Case-to-Sink, Flat Greased Surface
ikRθJA Junction-to-Ambient
jkRθJA Junction-to-Ambient (PCB Mount)
IRLZ44ZPbF
IRLZ44ZSPbF
IRLZ44ZLPbF
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 13.5mΩ
S ID = 51A
D2Pak
IRLZ44ZS
TO-262
IRLZ44ZL
Max.
51
36
204
80
0.53
± 16
78
110
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
1.87
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
www.irf.com
1
7/21/04
1 page IRLZ44Z/S/LPbF
60
50
40
30
20
10
0
25
50 75 100 125 150
TJ , Junction Temperature (°C)
175
Fig 9. Maximum Drain Current Vs.
Case Temperature
2.5
ID = 30A
VGS = 5.0V
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
Vs. Temperature
10
1 D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
CiC= iτi/τRi/iRi
R2R2
τ2 τ2
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
R3R3 Ri (°C/W) τi (sec)
τCτ 0.736 0.000345
τ3τ3 0.687 0.00147
0.449 0.007058
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page TO-262 Package Outline
IRLZ44Z/S/LPbF
TO-262 Part Marking Information
E XAMP L E :
T H IS IS AN IR L 3103L
L OT CODE 1789
AS S E MB L E D ON WW 19, 1997
IN T H E AS S E MB L Y L IN E "C"
N ote: "P " in as s em bly line
pos ition indicates "L ead-F ree"
OR
IN T E R N AT ION AL
R E CT IF IE R
L OGO
AS S E MB L Y
L OT CODE
IN T E R N AT ION AL
R E CT IF IE R
L OGO
AS S E MB L Y
L OT CODE
www.irf.com
P AR T NU MB E R
D AT E COD E
Y E AR 7 = 1997
WE E K 19
L INE C
P AR T NU MB E R
DAT E CODE
P = D E S IGN AT E S L E AD -F R E E
P R OD U CT (OP T ION AL )
YE AR 7 = 1997
WEE K 19
A = AS S E MB L Y S IT E CODE
11
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet IRLZ44ZSPBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRLZ44ZSPBF | AUTOMOTIVE MOSFET | International Rectifier |
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