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부품번호 | 33899 기능 |
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기능 | Programmable H-Bridge Power IC | ||
제조업체 | Freescale Semiconductor | ||
로고 | |||
전체 26 페이지수
www.DFaretaeSshceeatl4eUS.ceommiconductor
Advance Information
Document Number: MC33899
Rev. 2.0, 6/2007
Programmable H-Bridge
Power IC
The 33899 is designed to drive a DC motor in both forward and
reverse shaft rotation under pulse-width modulation (PWM) control of
speed and torque. A current mirror output provides an analog
feedback signal proportional to the load current. A serial peripheral
interface (SPI) is used to select slew rate control, current
compensation limits and to read diagnostic status (faults) of the H-
Bridge drive circuits. SPI diagnostic reporting includes open circuit,
short circuit to VIGNP, short circuit to ground, die temperature range,
and undervoltage on VIGNP.
33899
PROGRAMMABLE H-BRIDGE POWER IC
Features
• Drives Inductive Loads in a Full H-Bridge Configuration
• Current Mirror Output Signal (Gain Selectable via External
Resistor)
VW SUFFIX (Pb-FREE)
98ASH70693A
30-PIN HSOP
• Short Circuit Current Limiting
• Thermal Shutdown (Outputs Latched Off Until Reset via SPI)
• Internal Charge Pump Circuit for the Internal High-Side MOSFETs
ORDERING INFORMATION
• SPI-Selectable Slew Rate Control and Current Limit Control
• Overtemperature Shutdown
Device
Temperature
Range (TA)
Package
• Outputs Can Be Disabled to High-Impedance State
MC33899VW/R2 -40°C to 125°C
30 HSOP
• PWM-able up to 11 kHz @ 3.0 A
• Synchronous Rectification Control of the High-Side MOSFETs
• Low RDS(ON) Outputs at High Junction Temperature (< 165 mΩ @ TA = 125°C, VIGNP = 6.0 V)
• Outputs Survive Shorts to -1.0 V
• Pb-Free Packaging Designated by Suffix Code VW
VDDL +5.0 V VIGNP
MCU
33899
VIGNP
VCC
VDDQ
CSNS
REDIS
CRES
VCCL
FWD
REV
PWM
EN1
EN2
CS
SCLK
D1
D0
LSCMP
GND
S1
S0
RS
Figure 1. 33899 Simplified Application Diagram
* This document contains certain information on a new product.
Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
www.DPaINtaCSOhNeNeEt4CUTI.OcNoSm
Table 1. 33899 Pin Definitions (continued)
A functional description of each pin can be found in the Functional Pin Description section beginning on page 12.
Pin Number Pin Name
Formal Name
Definition
24 RS Slew Rate Control This input pin is connected to a resistor that sets slew timing.
25 PWM
PWM Input
This input pin is used to set the motor switching and frequency duty cycle.
26
FWD
Forward Input
This input pin, along with the reverse input pin REV, determines the direction of
current flow in the H-Bridge.
27
REV
Reverse Input
This input pin, along with the forward input pin FWD, determines the direction of
current flow in the H-Bridge.
28
29
30
Tab/Pad
VCCL
VCC
CSNS
Thermal
Interface /
GND
3.3 V Input
5.0 V Input
Current Sense
Exposed Pad Thermal
Interface
3.3 V input source.
5.0 V input source.
Output of current amplifier.
The exposed pad, a thermal interface for sinking heat from the device, is a high-
current GND connection and must be connected to GND (pins 12 and 19).
33899
4
Analog Integrated Circuit Device Data
Freescale Semiconductor
4페이지 www.DataSheet4U.com
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
Characteristics at -40°C ≤ TJ ≤ +150°C, 4.75 V ≤ VCC ≤ 5.25 V, 3.14 V ≤ VCCL ≤ 3.47 V, 2.97 V ≤ VDDQ ≤ 5.25 V, 6.0 V ≤ VIGNP
≤ 26.5 V unless otherwise noted. Typical values reflect the approximate parameter means at TA = 25°C under nominal conditions
unless otherwise noted.
Characteristic
Symbol Min Typ Max Unit
CONTROL INPUTS (CONTINUED)
Input Leakage Current—Digital Inputs
SCLK, DI: VIN = 0 V
Input Bias Current
EN1, EN2, FWD, REV, PWM: VIN = 5.0 V
CS: VIN = 0 V
DATA OUTPUT
Data Output Low Voltage
IOL = 1.6 mA
Data Output High Voltage
IOH = -800 µA
Data Out Tri-State Leakage
POWER OUTPUT
IIN
-5.0 –
IDWN 27 –
IUP -70 –
VDO_OL
VDO_OH
ILEAK
–
VDDQ - 0.5
- 5.0
–
–
–
µA
5.0
µA
70
- 27
V
0.4
V
–
5.0 µA
Breakdown Voltage
S0, S1, VIGNP: I = 100 µA
VBVDS
V
40 –
–
ON-Resistance (Each Output FET)
IOUT = 3.5 A, VIGNP = 6.0 V
RDS(ON)
–
mΩ
– 165
Body Diode Forward Voltage (All 4 Output Diodes) (6)
ENx = 0 V, IOUT = 3.0 A, TJ = 150°C
ENx = 0 V, IOUT = 3.0 A, TJ = 23°C
ENx = 0 V, IOUT = 3.0 A, TJ = -40°C
VF V
– – 1.0
– – 1.4
– – 1.8
OFF-State Output Bias
VCC = 5.0 V, EN1 = EN2 = 0 V, S0 Shorted to S1 (Through Motor)
VBIAS
V
0.2 VCC – 0.6 VCC
OFF-State Output Leakage (between SO and S1)
VCC = 0 V, EN1 = EN2 = 0 V, RL = 600 Ω, VIGN = 16 V
VCC = 5.0 V, EN1 = EN2 = 0 V, RL = 600 Ω, VIGN = 18 V
ILEAK
µA
– – 100
– – 100
Fault Threshold (OFF State) (EN1 = EN2 = 0 V)
V
Measured at S1
Measured at S0
VFAULT_THR1 0.65 VCC – 0.85 VCC
VFAULT_THR2 0.15 VCC – 0.35 VCC
CURRENT SENSE
Current Sense Zero
FWD = 5.0 V, REV = 0 V; Then FWD = 0 V, REV = 5.0 V, IS1/S0 = 0 A
Current Sense Ratio: kCSNS = IS1/S0 / ICS
(FWD = 5.0 V, REV = 0 V; Then FWD = 0 V, REV = 5.0 V)
IS1/S0 = -0.4 A
IS1/S0 = -1.6 A
IS1/S0 = -6.0 A(7)
ICSZ
kCSNS
kCSNS
kCSNS
– – 0.2 mA
250 – 500
340 – 435
– 400 –
Analog Integrated Circuit Device Data
Freescale Semiconductor
33899
7
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |