Datasheet.kr   

3LN02N 데이터시트 PDF




Sanyo Semicon Device에서 제조한 전자 부품 3LN02N은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 3LN02N 자료 제공

부품번호 3LN02N 기능
기능 Ultrahigh-Speed Switching Applications
제조업체 Sanyo Semicon Device
로고 Sanyo Semicon Device 로고


3LN02N 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.



전체 4 페이지수

미리보기를 사용할 수 없습니다

3LN02N 데이터시트, 핀배열, 회로
Owrdwerwin.Dg nautamSbheer :eEt4NUN.6c5o4m9
Features
Low ON resistance.
Ultrahigh-speed switching.
2.5V drive.
3LN02N
N-Channel Silicon MOSFET
3LN02N
Ultrahigh-Speed Switching Applications
Package Dimensions
unit : mm
2178
5.0 [3LN02N]
4.0 4.0
0.45
0.5
0.45 0.44
Specifications
Absolute Maximum Ratings at Ta=25°C
123
1.3 1.3
1 : Source
2 : Drain
3 : Gate
SANYO : NP
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Ratings
30
±10
0.3
1.2
0.4
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Sourse Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Marking : YD
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=100µA
VDS=10V, ID=150mA
min
30
0.4
0.4
Ratings
typ
max
Unit
V
10 µA
±10 µA
1.3 V
0.56
S
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71000 TS IM TA-2952 No.6549-1/4




3LN02N pdf, 반도체, 판매, 대치품
3LN02N
PD -- Ta
0.5
0.4
0.3
0.2
0.1
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT01988
Note on usage : Since the 3LN02N is designed for high-speed switching applications, please avoid using
this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2000. Specifications and information herein are subject
to change without notice.
PS No.6549-4/4

4페이지












구       성 총 4 페이지수
다운로드[ 3LN02N.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
3LN02M

Ultrahigh-Speed Switching Applications

Sanyo Semicon Device
Sanyo Semicon Device
3LN02N

Ultrahigh-Speed Switching Applications

Sanyo Semicon Device
Sanyo Semicon Device

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵