|
|
|
부품번호 | KHB9D5N20F2 기능 |
|
|
기능 | (KHB9D5N20F1/F2/P1) N CHANNEL MOS FIELD EFFECT TRANSISTOR | ||
제조업체 | KEC | ||
로고 | |||
www.DataSheet4U.com S E M I C O N D U C TO R
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switch mode power supplies.
FEATURES
VDSS=200V, ID=9.5A
Drain-Source ON Resistance
: RDS(ON)=400m @VGS = 10V
Qg(typ.)=18.5nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
KHB9D5N20F1 UNIT
KHB9D5N20P1
KHB9D5N20F2
Drain-Source Voltage
VDSS
200
V
Gate-Source Voltage
Drain Current
@TC=25
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above25
VGSS
ID
IDP
EAS
EAR
dv/dt
PD
30
9.5 9.5*
38 38*
180
8.7
5.5
87 40
0.7 0.32
V
A
mJ
mJ
V/ns
W
W/
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Tj
Tstg
150
-55 150
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-
Ambient
RthJC
RthJA
1.44
62.5
3.13 /W
62.5 /W
PIN CONNECTION
D
G
2007. 5. 10
S
Revision No : 0
KHB9D5N20P1/F1/F2
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KHB9D5N20P1
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D 0.8 +_ 0.1
E 3.6 +_ 0.2
F 2.8 +_ 0.1
G 3.7
H 0.5+0.1/-0.05
I 1.5
J 13.08 +_ 0.3
K 1.46
L 1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O 4.5 +_ 0.2
P 2.4 +_ 0.2
Q 9.2 +_ 0.2
TO-220AB
KHB9D5N20F1
AC
E
LM
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 MAX
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
TO-220IS (1)
KHB9D5N20F2
AC
S
E
LL
M
DD
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.0 +_0.3
B 15.0+_ 0.3
C 2.70+_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_0.2
F 3.0+_0.3
G 12.0 +_0.3
H 0.5+0.1/-0.05
J 13.6 +_0.5
K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_0.1
P 6.8 +_0.1
Q 4.5+_ 0.2
R 2.6+_ 0.2
S 0.5 Typ
TO-220IS
1/7
KHB9D5N20P1/F1/F2
2500
2000 Ciss
1500
1000
500
Coss
Crss
Fig7. C - VDS
Frequency =1MHz
0
10-1
100 101
Drain - Source Voltage VDS (V)
Fig9. Safe Operation Area
(KHB9D5N20P1)
Operation in this
102 area is limited by RDS(ON)
101 100µs
100
TC= 25 C
Tj = 150 C
Single nonrepetitive pulse
10-1100
101
1ms
10ms
100ms
DC
102
Drain - Source Voltage VDS (V)
Fig11. ID - Tj
12
10
8
6
4
2
0
25 50 75 100 125 150
Junction Temperature Tj ( C)
2007. 5. 10
Revision No : 0
12 ID= 9.5A
10
8
6
Fig8. Qg- VGS
VDS = 50V
VDS = 125V
VDS = 200V
4
2
0
0 5 10 15
Gate - Charge Qg (nC)
20
Fig10. Safe Operation Area
(KHB9D5N20F1, KHB9D5N20F2)
102 Operation in this
area is limited by RDS(ON)
100 µs
101
1 ms
100 10 ms
TC= 25 C
Tj = 150 C
10-1 Single nonrepetitive pulse
100 101
100 ms
DC
102
Drain - Source Voltage VDS (V)
4/7
4페이지 KHB9D5N20P1/F1/F2
Fig16. Resistive Load Switching
0.5 VDSS
25 Ω
10V VGS
VDS
RL 90%
VDS VGS 10%
td(on) tr
ton
tf
td(off)
toff
Fig17. Source - Drain Diode Reverse Recovery and dv /dt
IF
0.8 x VDSS
DUT
driver
10V VGS
VDS
IS
ISD
(DUT)
Body Diode Forword Current
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forword Voltage drop
2007. 5. 10
Revision No : 0
7/7
7페이지 | |||
구 성 | 총 7 페이지수 | ||
다운로드 | [ KHB9D5N20F2.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
KHB9D5N20F | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
KHB9D5N20F1 | (KHB9D5N20F1/F2/P1) N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |