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DBG250G 데이터시트 PDF




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기능 Diffused Junction Silicon Diode
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DBG250G 데이터시트, 핀배열, 회로
www.DataSheet4U.com
Ordering number : ENA0701
DBG250G
SANYO Semiconductors
DATA SHEET
DBG250G Diffused Junction Silicon Diode
25A Single-Phase Bridge Rectifier
Features
Glass passivation for high reliability.
Plastic molded structure.
Peak reverse voltage : VRM=600V.
Average output current : IO=25A.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Peak Reverse Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Dilective Strength Voltage
Tightening Torque
Symbol
VRM
IO
IFSM
Tj
Tstg
Vdis
TOR
Conditions
Tc=113°C, with heatsink
Ta=25°C, without heatsink
50Hz sine 1cycle peak value
Terminals tc case, AC 1 minute
( ): recommended value
Electrical Characteristics at Ta=25°C Per Constituent element of bridge.
Parameter
Forward Voltage
Reverse Current
Thremal Resistance(Junction-Ambient)
Thremal Resistance(Junction-Case)
Thremal Resistance(Junction-Lead)
Marking: BG250G
Symbol
VF
IR
Rth(j-a)
Rth(j-c)
Rth(j-l)
Conditions
IF=12.5A
VR=600V
Without heatsink
With heatsink
Without heatsink
Ratings
600
25
3.6
300
150
--55 to +150
2.5
0.8(0.5)
Unit
V
A
A
A
°C
°C
kV
N•m
Ratings
min typ max
Unit
0.92 V
10 µA
25 °C / W
0.8 °C / W
5 °C / W
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
32207RB TI IM TC-00000584 No. A0701-1/3





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부품번호상세설명 및 기능제조사
DBG250G

Diffused Junction Silicon Diode

Sanyo Semicon Device
Sanyo Semicon Device

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