Datasheet.kr   

EMH2603 데이터시트 PDF




Sanyo Semicon Device에서 제조한 전자 부품 EMH2603은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 EMH2603 자료 제공

부품번호 EMH2603 기능
기능 N-Channel and P-Channel Silicon MOSFETs
제조업체 Sanyo Semicon Device
로고 Sanyo Semicon Device 로고


EMH2603 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 7 페이지수

미리보기를 사용할 수 없습니다

EMH2603 데이터시트, 핀배열, 회로
www.DataSheet4U.com
Ordering number : ENA0657
EMH2603
SANYO Semiconductors
DATA SHEET
EMH2603
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
The EMH2603 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
ultrahigh-speed switching, thereby enabling high-density mounting.
Nch: 2.5V drive.
Pch: 1.8V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm20.8mm) 1unit
Mounted on a ceramic board (900mm20.8mm)
Parameter
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Marking : FC
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=100µA
VDS=10V, ID=80mA
N-channel
P-channel
30 --20
±10 ±10
0.15 --2
0.6 --8
0.6 1.1
1.2
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Ratings
min typ max
Unit
30 V
1 µA
±10 µA
0.4 1.3 V
0.13
0.22
S
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22107PE TI IM TC-00000506 No. A0657-1/7




EMH2603 pdf, 반도체, 판매, 대치품
EMH2603
RDS(on) -- VGS
[Nch]
10
Ta=25°C
9
8
7
6
5 80mA
4
ID=40mA
3
2
1
0
0 1 2 3 4 5 6 7 8 9 10
Gate-to-Source Voltage, VGS -- V IT00031
RDS(on) -- ID
[Nch]
10
VGS=4V
7
5
Ta=75°C
3 25°C
--25°C
2
RDS(on) -- VGS
700
600
--0.5A
500
--1.0A
400
300 ID= --0.3A
[Pch]
Ta=25°C
200
100
0
0 --2 --4 --6 --8
Gate-to-Source Voltage, VGS -- V IT10540
RDS(on) -- Ta
[Pch]
500
400
300 ID= --0.3A, VGS= --1.8V
200
ID=
ID=
--0.5A,
--1.0A,
VGS=
VGS=
--2.5V
--4.0V
100
1.0
0.01
10
7
5
3
2
23
5 7 0.1
23
5
Drain Current, ID -- A
RDS(on) -- ID
IT00032
[Nch]
VGS=2.5V
Ta=75°C
25°C
--25°C
1.0
0.01
100
7
5
3
2
10
7
5
3
2
1.0
0.001
23
5 7 0.1
23
5
Drain Current, ID -- A
IT00033
RDS(on) -- ID
[Nch]
VGS=1.5V
Ta=75°C
--25°C
25°C
23
5 7 0.01
23
5
Drain Current, ID -- A
IT00034
0
--60 --40 --20 0 20 40 60 80 100 120
Ambient Temperature, Ta -- °C
10
7 VDS= --10V
yfs-- ID
140 160
IT10541
[Pch]
5
3
2
1.0
Ta=
--25°C
75°C
25°C
7
5
3
2
0.1
--0.01
--10
7
5
3
2
23
5 7 --0.1 2 3 5 7 --1.0
Drain Current, ID -- A
IS -- VSD
23
5 7 --10
IT10542
[Pch]
VGS=0V
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
--0.4
--0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1
Diode Forward Voltage, VSD -- V IT10543
No. A0657-4/7

4페이지










EMH2603 전자부품, 판매, 대치품
EMH2603
Note on usage : Since the EMH2603 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of February, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0657-7/7

7페이지


구       성 총 7 페이지수
다운로드[ EMH2603.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
EMH2601

N-Channel and P-Channel Silicon MOSFETs

Sanyo Semicon Device
Sanyo Semicon Device
EMH2602

N-Channel and P-Channel Silicon MOSFETs

Sanyo Semicon Device
Sanyo Semicon Device

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵