(PDF) MG200Q2YS60A Datasheet - High Power Switching Applications Motor Control Applications

Número de pieza	MG200Q2YS60A
Descripción	High Power Switching Applications Motor Control Applications
Fabricantes	Toshiba Semiconductor
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No Preview Available ! www.DataSheet4U.com MG200Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS60A (1200V/200A 2in1) High Power Switching Applications Motor Control Applications · Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) · The electrodes are isolated from case. · Low thermal resistance · VCE (sat) = 2.4 V (typ.) Equivalent Circuit Ｃ1 5 6 FO 7 E1/C2 4 OT 1 2 FO 3 E2 Signal terminal 1. G (L) 2. FO (L) 3. E (L) 4. VD 5. G (H) 6. FO (H) 7. E (H) 8. Open 1 2001-08-28 1 page MG200Q2YS60A Remark <Short circuit capability condition> l Short circuit capability is 6 ms after fault output signal. Please keep following condition to use fault output signal. · VCC <= 750 V · 14.8 V =< VGE <= 17.0 V · RG >= 10 W · Tj <= 125°C <Gate voltage> l To use this product, VGE must be provided higher than 14.8 V. In case VGE is less than 14.8 V, fault signal FO may not be output even under error conditions. 5 2001-08-28 5 Page

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PDF MG200Q2YS60A Data sheet ( Hoja de datos )