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Número de pieza | MG400Q1US65H | |
Descripción | High Power & High Speed Switching Applications | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
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MG400Q1US65H
TOSHIBA IGBT Module Silicon N Channel IGBT
MG400Q1US65H
High Power & High Speed Switching
Applications
Unit: mm
• High input impedance
• Enhancement-mode
• The electrodes are isolated from case.
Equivalent Circuit
E
CE
G (B)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Forward current
DC
1 ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque
Terminal
Mounting
Symbol
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
VIsol
⎯
⎯
JEDEC
JEITA
TOSHIBA
Weight: 465 g (typ.)
Rating
1200
±20
400
800
400
800
2650
150
−40 to 125
2500
(AC 1 minute)
3
3
Unit
V
V
A
A
W
°C
°C
V
N·m
―
―
2-109F1A
1 2003-12-19
1 page 1600
1200
VCE, VGE – QG
Common emitter
RL = 1.5 Ω
Tc = 25°C
VCE = 0
800
200 V 400 V 600 V
400
16
12
8
4
0
0
800
1600
2400
3200
4000
Charge QG (nC)
MG400Q1US65H
100000
10000
C – VCE
Cies
Coes
Cres
1000
Common emitter
VGE = 0
f = 1 MHz
Tc = 25°C
100
0.01
0.1
1
10
Collector-emitter voltage VCE (V)
100
Short circuit SOA
6
5
4
3
2
VCC <= 900 V
1 Tj <= 125°C
tw = 5 µs
0
0 200 400 600 800 1000 1200 1400
Collector-emitter voltage VCE (V)
1000
100
10
Reverse bias SOA
1
Tj <= 125°C
VGE = ±15 V
RG = 2.4 Ω
0.1
0
500
1000
Collector-emitter voltage VCE (V)
1500
Rth (t) – tw
1
0.1
0.01
Diode stage
Transistor stage
Tc = 25°C
0.001
0.001
0.01
0.1
1
Pulse width tw (s)
10
5
2003-12-19
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet MG400Q1US65H.PDF ] |
Número de pieza | Descripción | Fabricantes |
MG400Q1US65H | High Power & High Speed Switching Applications | Toshiba Semiconductor |
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