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Número de pieza | MG600Q1US61 | |
Descripción | IGBT Module Silicon N Channel IGBT | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
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TOSHIBA IGBT Module Silicon N Channel IGBT
MG600Q1US61
MG600Q1US61
High Power Switching Applications
Motor Control Applications
Unit: mm
· High input impedance
· High speed: tf = 0.3 µs (max)
Inductive load
· Low saturation voltage: VCE (sat) = 2.6 V (max)
· The electrodes are isolated from case.
· Enhancement-mode
Equivalent Circuit
C
G
EE
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC (Tc = 80°C)
Forward current
DC (Tc = 80°C)
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque
Terminal
Mounting
Symbol
VCES
VGES
IC
IF
PC
Tj
Tstg
Visol
¾
¾
JEDEC
JEITA
TOSHIBA
Weight: 465 g (typ.)
Rating
1200
±20
600
600
5400
150
-40 to 125
2500
(AC 1 minute)
3
3
Unit
V
V
A
A
W
°C
°C
Vrms
N·m
N·m
―
―
2-109F1A
1 2002-10-04
1 page 600
Common cathode
VGE = 0
500
IF – VF
400
Tj = 25°C
300
200 125
100
0
0
-40
0.5 1 1.5 2 2.5
Forward voltage VF (V)
3
MG600Q1US61
1000
Common emitter
RL = 1 W
Tj = 25°C
800
VCE, VGE – QG
400
600 600
200
400
VCE = 0 V
200
20
16
12
8
4
00
0
1000
2000
3000
4000
5000
Charge QG (nC)
Switching time – RG
10000
VCC = 600 V, IC = 600 A
VGE = ±15 V
: Tj = 25°C
: Tj = 125°C
toff
td (off)
1000
ton
tr
td (on)
100
0
tf
5 10 15 20
Gate resistance RG (9)
25
Switching loss – RG
1000
Eon
100
10
0
Eoff
VCC = 600 V
IC = 600 A
VGE = ±15 V
: Tj = 25°C
: Tj = 125°C
5 10 15 20 25
Gate resistance RG (9)
10000
Switching time – IC
1000
toff td (off)
100
10
0
td (on)
ton
tf
tr VCC = 600 V, RG = 2 W
VGE = ±15 V, Ls = 100 nH
: Tj = 25°C
: Tj = 125°C
100 200 300 400 500 600
Collector current IC (A)
Switching loss – IC
1000
100
Eoff
Eon
10
VCC = 600 V, RG = 2 W
VGE = ±15 V, Ls = 100 nH
: Tj = 25°C
: Tj = 125°C
1
0 100 200 300 400 500 600
Collector current IC (A)
5 2002-10-04
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet MG600Q1US61.PDF ] |
Número de pieza | Descripción | Fabricantes |
MG600Q1US61 | IGBT Module Silicon N Channel IGBT | Toshiba Semiconductor |
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