|
|
|
부품번호 | GTS9926E 기능 |
|
|
기능 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
제조업체 | GTM | ||
로고 | |||
www.DataSheet4U.com
ISSUED DATE :2005/01/07
REVISED DATE :2006/12/25B
GTS9926E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
20V
28m
4.6A
Description
The GTS9926E provides the designer with the best combination of fast switching, ruggedized device design,
ultra low on-resistance and cost-effectiveness.
Features
*Low on-resistance
*Capable of 2.5V gate drive
*Low drive current
*Surface mount package
Package Dimensions
REF.
A
A1
b
c
D
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current3 , VGS@10V
Continuous Drain Current3 , VGS@10V
Pulsed Drain Current1,2
Total Power Dissipation
VGS
ID @TA=25
ID @TA=70
IDM
PD @Ta=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient
Max.
Symbol
Rthj-a
Millimeter
Min. Max.
- 1.20
0.05
0.15
0.19
0.30
0.09
0.20
2.90
3.10
REF.
E
E1
e
L
S
Ratings
20
±12
4.6
3.7
20
1
0.008
-55 ~ +150
Value
125
Millimeter
Min. Max.
6.20
6.60
4.30
4.50
0.65 BSC
0.45
0.75
0° 8°
Unit
V
V
A
A
A
W
W/
Unit
/W
GTC9926E
Page: 1/4
ISSUED DATE :2005/01/07
REVISED DATE :2006/12/25B
Fig 7. Gate Charge Characteristics Fig 8. Effective Transient Thermal Impedance
Fig 9. Maximum Safe Operating Area Fig 10. Gate Threshold Voltage v.s. Junction
Temperature
Fig 11. Forward Characteristics of
Reverse Diode
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GTC9926E
Page: 4/4
4페이지 | |||
구 성 | 총 4 페이지수 | ||
다운로드 | [ GTS9926E.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
GTS9926 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM |
GTS9926E | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |