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부품번호 | H5N2519P 기능 |
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기능 | Silicon N Channel MOS FET High Speed Power Switching | ||
제조업체 | Renesas Technology | ||
로고 | |||
전체 7 페이지수
www.DataSheet4U.com
H5N2519P
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low leakage current
• High speed switching
Outline
TO-3P
D
G
S
123
REJ03G0478-0200
Rev.2.00
Nov.19.2004
1. Gate
2. Drain (Flange)
3. Source
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
250
±30
65
195
65
22
30.2
150
0.833
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.2.00 Nov. 19, 2004 page 1 of 6
H5N2519P
Static Drain to Source on State Resistance
vs. Temperature
0.100
Pulse Test
V GS = 10 V
0.080
I D = 65 A
0.060
0.040
0.020
32.5 A
10 A
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
1000
500
Body-Drain Diode Reverse
Recovery Time
200
100
50
20 di / dt = 100 A / µs
10
0.1 0.3
VGS = 0, Ta = 25°C
1 3 10 30 100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
500
I D= 65 A
400
V DS = 50 V
100 V
VGS
200 V
300
VDD
200
20
16
12
8
100
V DS = 200 V
4
100 V
50 V
0
0 40 80 120 160 200
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current
100
50 Tc = –25°C
20
10
25°C
5
75°C
2
1
V DS = 10 V
0.5 Pulse Test
0.2
0.2 0.5 1 2 5 10 20
Drain Current ID (A)
50 100
10000
5000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
2000
1000
500
Coss
200
100
Crss
50
20 VGS = 0
f = 1 MHz
10
0 20 40 60 80 100
Drain to Source Voltage VDS (V)
Switching Characteristics
10000
VGS = 10 V, V DD = 125 V
PW = 5 µs, duty < 1 %
Rg =10 Ω
1000 t f
tr
t d(off)
tf
100
t d(on)
tr
10
0.1 0.3 1 3
Drain Current
10 30
ID (A)
100
Rev.2.00 Nov. 19, 2004 page 4 of 6
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H5N2519P | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
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