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PDF RQA0009SXAQS Data sheet ( Hoja de datos )
| Número de pieza | RQA0009SXAQS | |
| Descripción | Silicon N-Channel MOS FET | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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RQA0009SXAQS
Silicon N-Channel MOS FET
Features
High Output Power, High Gain, High Efficiency
Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65%
(VDS = 6 V, f = 520 MHz)
Compact package capable of surface mounting
Electrostatic Discharge Immunity Test
(IEC Standard, 61000-4-2, Level4)
Outline
RENESAS Package code: PLZZ0004CA-A
(Package Name : UPAK)
321
4
1
Preliminary Datasheet
R07DS0493EJ0200
(Previous: REJ03G1566-0100)
Rev.2.00
Jun 28, 2011
3
1. Gate
2. Source
3. Drain
4. Source
Note: Marking is “SX”.
2, 4
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Channel dissipation
Channel temperature
Storage temperature
Note: Value at Tc = 25C
Symbol
VDSS
VGSS
ID
Pchnote
Tch
Tstg
Ratings
16
±5
3.2
15
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
W
C
C
This device is sensitive to electro static discharge. An adequate careful handling procedure is requested.
R07DS0493EJ0200 Rev.2.00
Jun 29, 2011
Page 1 of 21
1 page  
RQA0009SXAQS
Output Power, Drain Current
vs. Drain to Source Voltage
40 3
35 Pout
2.5
30 2
25 1.5
20 ID
1
15
IDQ = 200 mA
f = 155MHz
0.5
Pin = +20dBm
10 0
3 3.5 4 4.5 5
Drain to Source Voltage VDS (V)
Output Power, Drain Current
vs. Idling Current
40 3
35 Pout
2.5
30 2
25 1.5
20 ID
1
15
VDS = 3.6V
f = 155 MHz
0.5
Pin = +20 dBm
10 0
0 100 200 300 400 500
Idling Current IDQ (mA)
Output Power, Drain Current
vs. Input Power
40 3.0
35 Pout
30
ID
25
2.5
2.0
1.5
20 1.0
VDS = 7 V
15 f = 155 MHz 0.5
IDQ = 200 mA
10 0
0 5 10 15 20 25 30
Input Power Pin (dBm)
Preliminary
Power Gain, Power Added Efficiency
vs. Drain to Source Voltage
40 80
PAE
30 60
20
PG
40
10 20
IDQ = 200 mA
f = 155 MHz
Pin = +20dBm
00
3 3.5 4 4.5 5
Drain to Source Voltage VDS (V)
Power Gain, Power Added Efficiency
vs. Idling Current
40
PAE
80
30 60
20 40
PG
10
VDS = 3.6 V
20
f = 155 MHz
Pin = +20 dBm
00
0 100 200 300 400 500
Idling Current IDQ (mA)
Power Gain, Power Added Efficiency
vs. Input Power
40 80
30
PG
20
60
40
PAE
10
0
0 5 10
VDS = 7 V
f = 155 MHz
20
IDQ = 200 mA
0
15 20 25 30
Input Power Pin (dBm)
R07DS0493EJ0200 Rev.2.00
Jun 29, 2011
Page 5 of 21
5 Page 
RQA0009SXAQS
Output Power, Drain Current
vs. Drain to Source Voltage
40 3
35 Pout
2.5
30 2
25 1.5
20 ID
1
15
IDQ = 200 mA
f = 465MHz
0.5
Pin=+20dBm
10 0
3 3.5 4 4.5 5
Drain to Source Voltage VDS (V)
Output Power, Drain Current
vs. Idling Current
40
Pout
35
3
2.5
30 2
25
ID
20
1.5
1
15
VDS = 3.6V
Pin = +20 dBm
0.5
f = 465 MHz
10 0
0 100 200 300 400 500
Idling Current IDQ (mA)
Output Power, Drain Current
vs. Input Power
40 3
35 2.5
30 Pout
2
25 1.5
20
ID
1
15
VDS = 7 V
IDQ = 200 mA 0.5
f = 465 MHz
10 0
0 5 10 15 20 25 30
Input Power Pin (dBm)
Preliminary
Power Gain, Power Added Efficiency
vs. Drain to Source Voltage
40
PAE
80
30 60
20
PG
40
10 20
IDQ = 200 mA
f = 465 MHz
Pin=+20dBm
00
3 3.5 4 4.5 5
Drain to Source Voltage VDS (V)
Power Gain, Power Added Efficiency
vs. Idling Current
40
PAE
80
30 60
VDS = 3.6 V
20 Pin = +20 dBm 40
f = 465 MHz
PG
10 20
00
0 100 200 300 400 500
Idling Current IDQ (mA)
Power Gain, Power Added Efficiency
vs. Input Power
40 80
PAE
30 60
20 PG
40
10 20
VDS = 7 V
IDQ = 200 mA
f = 465 MHz
00
0 5 10 15 20 25 30
Input Power Pin (dBm)
R07DS0493EJ0200 Rev.2.00
Jun 29, 2011
Page 11 of 21
11 Page | ||
| Páginas | Total 22 Páginas | |
| PDF Descargar | [ Datasheet RQA0009SXAQS.PDF ] | |
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