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PDF GFB75N03 Data sheet ( Hoja de datos )
| Número de pieza | GFB75N03 | |
| Descripción | N-Channel Enhancement-Mode MOSFET | |
| Fabricantes | General Semiconductor | |
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GFB75N03
N-Channel Enhancement-Mode MOSFET
TGREENNCFHET®
TO-263AB
VDS 30V RDS(ON) 6.5mΩ ID 80A
New Product
G
D
0.380 (9.65)
0.420 (10.67)
0.21 (5.33)
Min.
D
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
S
0.42
(10.66)
0.320 (8.13)
0.360 (9.14)
PIN
GDS
Seating Plate
-T-
0.096 (2.43)
0.102 (2.59)
0.027 (0.686)
0.037 (0.940)
0.575 (14.60)
0.625 (15.88)
0.120 (3.05)
0.155 (3.94)
0.055 (1.39)
0.066 (1.68)
Dimensions in inches
and (millimeters)
0.014 (0.35)
0.020 (0.51)
0.100 (2.54)
0.130 (3.30)
0.63
(17.02)
0.33
(8.38)
Mounting Pad
Layout
0.08
(2.032)
0.24
(6.096)
0.12
(3.05)
Mechanical Data
Case: JEDEC TO-263 molded plastic body
Terminals: Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Position: Any Weight: 1.3g
Features
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for Low Voltage DC/DC Converters
• Fast Switching for High Efficiency
Maximum Ratings and Thermal Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current(1)
VDS
30
VGS ±20
ID 80
Pulsed Drain Current
IDM 240
Maximum Power Dissipation
TA = 25°C
TA = 100°C
PD
69.4
27.8
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
Lead Temperature (1/8” from case for 5 sec.)
TL 275
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance(2)
RθJC
RθJA
1.8
40
Notes: (1) Maximum DC current limited by the package
(2) 1-in2 2oz. Cu PCB mounted
Unit
V
A
W
°C
°C
°C/W
°C/W
5/1/01
1 page  
www.DataSheet4U.com
GFB75N03
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 10 – Breakdown Voltage vs.
Junction Temperature
41
ID = 250µA
40
39
38
37
36
35
--50 --25 0 25 50 75 100 125 150
TJ -- Junction Temperature (°C)
Fig. 11 – Transient Thermal
Impedance
1
D = 0.5
0.2
PDM
0.1
0.1
0.05
Single Pulse
0.01
t1
t2
1. Duty Cycle, D = t1/t2
2. RθJC (t) = RθJC(norm) *RθJC
3. RθJC = 1.8°C/W
4. TJ - TC = PDM * RθJC (t)
0.0001 0.001
0.01
0.1
1
10
Pulse Duration (sec.)
Fig. 12 – Power vs. Pulse Duration
1000
Single Pulse
RθJA = 1.8°C/W
800 TC = 25°C
600
400
200
0
0.0001
0.001
0.01
0.1
Pulse Duration (sec.)
1
10
Fig. 13 – Maximum Safe Operating Area
1000
100
RDS(ON) Limit
10
VGS = 10V
Single Pulse
RθJC = 1.8°C/W
TA = 25°C
1
0.1 1
1ms
10ms
100µs
100ms
DC
10
VDS -- Drain-Source Voltage (V)
100
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet GFB75N03.PDF ] | |
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