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부품번호 | LO3336-U 기능 |
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기능 | Hyper 3 mm T1 LED/ Non Diffused Hyper-Bright LED | ||
제조업체 | Siemens Semiconductor Group | ||
로고 | |||
전체 7 페이지수
Hyper 3 mm (T1) LED, Non Diffused
Hyper-Bright LED
Besondere Merkmale
q nicht eingefärbtes, klares Gehäuse
q zur Einkopplung in Lichtleiter
q als optischer Indikator einsetzbar
q Lötspieße mit Aufsetzebene
q gegurtet lieferbar
q Störimpulsfest nach DIN 40839
Features
q colorless, clear package
q optical coupling into light pipes
q for use as optical indicator
q solder leads with stand-off
q available taped on reel
q load dump resistant acc. to DIN 40839
LS 3336, LA 3336, LO 3336
LY 3336
Semiconductor Group
1
1998-09-18
LS 3336, LA 3336, LO 3336, LY 3336
Kennwerte (TA = 25 ˚C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
LS LA LO LY
Wellenlänge des emittierten Lichtes
Wavelength at peak emission
IF = 20 mA
(typ.) λpeak
(typ.)
Dominantwellenlänge
Dominant wavelength
IF = 20 mA
(typ.) λdom
(typ.)
Spektrale Bandbreite bei 50% Irel max
Spectral bandwidth at 50% Irel max
IF = 20 mA
(typ.) ∆λ
(typ.)
Abstrahlwinkel bei 50% Iv (Vollwinkel)
Viewing angle at 50% Iv
2ϕ
Durchlaßspannung
Forward voltage
IF = 20 mA
(typ.) VF
(max.) VF
Sperrstrom
Reverse current
VR = 3 V
(typ.) IR
(max.) IR
Temperaturkoeffizient von λdom (IF = 20 mA)
Temperature coefficient of λdom (IF = 20 mA)
TCλ
Temperaturkoeffizient von λpeak,
IF = 20 mA
Temperature coefficient of λpeak,
IF = 20 mA
TCλ
(typ.)
(typ.)
Temperaturkoeffizient von VF, IF = 20 mA (typ.) TCV
Temperature coefficient of VF, IF = 20 mA (typ.)
645 622 610 591 nm
632 615 605 587 nm
16 16 16 15 nm
50 50 50 50 Grad
deg.
2.0 2.0 2.0 2.0 V
2.6 2.6 2.6 2.6 V
0.01 0.01 0.01 0.01 µA
10 10 10 10 µA
0.014 0.062 0.067 0.096 nm/K
0.14 0.13 0.13 0.13 nm/K
– 1.95 – 1.78 – 1.67 – 2.51 mV/K
Semiconductor Group
4
1998-09-18
4페이지 LS 3336, LA 3336, LO 3336, LY 3336
Zulässige Impulsbelastbarkeit IF = f (tp)
Permissible pulse handling capability
LS, LA, LO
Duty cycle D = parameter, TA = 25 ˚C
10 1
A
ΙF 5
D
=
tp
T
tp
T
OHL00322
ΙF
10 0
5
0.2
D=
0.005
0.01
0.02
0.05
0.1
10 -1 0.5
5
Zulässige Impulsbelastbarkeit IF = f (tp)
Permissible pulse handling capability
LY
Duty cycle D = parameter, TA = 25 ˚C
10 0
A
ΙF
5
D
=
tp
T
tp
T
OHL00316
ΙF
0.1
10 -1 0.2
D=
0.005
0.01
0.02
0.05
5 0.5
10 -2
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2
tp
10 -2
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2
tp
Maßzeichnung
(Maße in mm, wenn nicht anders angegeben)
Package Outlines (Dimensions in mm, unless otherwise specified)
Area not flat
4.8
4.4
3.4
3.1
1.8
1.2
29.0
27.0
Cathode
Approx. weight 0.15 g
3.7 0.6
3.5 0.4
6.1
5.7
Cathode
GEX06951
Kathodenkennzeichnung: Kürzerer Lötspieß
Cathode mark:
Short solder lead
Semiconductor Group
7
1998-09-18
7페이지 | |||
구 성 | 총 7 페이지수 | ||
다운로드 | [ LO3336-U.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
LO3336-RU | Hyper 3 mm T1 LED/ Non Diffused Hyper-Bright LED | Siemens Semiconductor Group |
LO3336-S | Hyper 3 mm T1 LED/ Non Diffused Hyper-Bright LED | Siemens Semiconductor Group |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |