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부품번호 | LO3366-R 기능 |
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기능 | Hyper 3 mm T1 LED/ Diffused Hyper-Bright LED | ||
제조업체 | Siemens Semiconductor Group | ||
로고 | |||
Hyper 3 mm (T1) LED, Diffused
Hyper-Bright LED
Besondere Merkmale
q eingefärbtes, diffuses Gehäuse
q zur Einkopplung in Lichtleiter
q als optischer Indikator einsetzbar
q Lötspieße mit Aufsetzebene
q gegurtet lieferbar
q Störimpulsfest nach DIN 40839
Features
q colored, diffused package
q optical coupling into light pipes
q for use as optical indicator
q solder leads with stand-off
q available taped on reel
q load dump resistant acc. to DIN 40839
LS 3366, LA 3366, LO 3366
LY 3366
Semiconductor Group
1
1998-09-18
LS 3366, LA 3366, LO 3366, LY 3366
Kennwerte (TA = 25 ˚C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Werte
Values
Einheit
Unit
LS LA LO LY
Wellenlänge des emittierten Lichtes
Wavelength at peak emission
IF = 20 mA
(typ.) λpeak
(typ.)
Dominantwellenlänge
Dominant wavelength
IF = 20 mA
(typ.) λdom
(typ.)
Spektrale Bandbreite bei 50% Irel max
Spectral bandwidth at 50% Irel max
IF = 20 mA
(typ.) ∆λ
(typ.)
Abstrahlwinkel bei 50% Iv (Vollwinkel)
Viewing angle at 50% Iv
2ϕ
Durchlaßspannung
Forward voltage
IF = 20 mA
(typ.) VF
(max.) VF
Sperrstrom
Reverse current
VR = 3 V
(typ.) IR
(max.) IR
Temperaturkoeffizient von λdom (IF = 20 mA)
Temperature coefficient of λdom (IF = 20 mA)
TCλ
Temperaturkoeffizient von λpeak,
IF = 20 mA
Temperature coefficient of λpeak,
IF = 20 mA
TCλ
(typ.)
(typ.)
Temperaturkoeffizient von VF, IF = 20 mA (typ.) TCV
Temperature coefficient of VF, IF = 20 mA (typ.)
645 622 610 591 nm
632 615 605 587 nm
16 16 16 15 nm
70 70 70 70 Grad
deg.
2.0 2.0 2.0 2.0 V
2.6 2.6 2.6 2.6 V
0.01 0.01 0.01 0.01 µA
10 10 10 10 µA
0.014 0.062 0.067 0.096 nm/K
0.14 0.13 0.13 0.13 nm/K
– 1.95 – 1.78 – 1.67 – 2.51 mV/K
Semiconductor Group
4
1998-09-18
4페이지 LS 3366, LA 3366, LO 3366, LY 3366
Zulässige Impulsbelastbarkeit IF = f (tp)
Permissible pulse handling capability
LS, LA, LO
Duty cycle
10 1
D
=
parameter,
TA
=
25 ˚C
OHL00322
A tp
ΙF 5
D
=
tp
T
ΙF
T
10 0
5
0.2
D=
0.005
0.01
0.02
0.05
0.1
10 -1 0.5
5
Zulässige Impulsbelastbarkeit IF = f (tp)
Permissible pulse handling capability
LY
Duty cycle D = parameter, TA = 25 ˚C
10 0 OHL00316
A
ΙF
5
D
=
tp
T
tp
T
ΙF
0.1
10 -1 0.2
D=
0.005
0.01
0.02
0.05
5 0.5
10 -2
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2
tp
10 -2
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2
tp
Maßzeichnung
(Maße in mm, wenn nicht anders angegeben)
Package Outlines (Dimensions in mm, unless otherwise specified)
Area not flat
4.8
4.4
2.7
2.1
3.4
3.1
Collector/
Cathode
1.8
1.2
29.0
27.0
3.7 0.6
3.5 0.4
6.1
5.7
Chip position
GEX06710
Kathodenkennzeichnung: Kürzerer Lötspieß
Cathode mark:
Short solder lead
Semiconductor Group
7
1998-09-18
7페이지 | |||
구 성 | 총 7 페이지수 | ||
다운로드 | [ LO3366-R.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
LO3366-PS | Hyper 3 mm T1 LED/ Diffused Hyper-Bright LED | Siemens Semiconductor Group |
LO3366-Q | Hyper 3 mm T1 LED/ Diffused Hyper-Bright LED | Siemens Semiconductor Group |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |