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PDF JTDB25 Data sheet ( Hoja de datos )
| Número de pieza | JTDB25 | |
| Descripción | High power COMMON BASE bipolar transistor | |
| Fabricantes | GHz Technology | |
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JTDB 25
25 Watts, 36 Volts, Pulsed
Avionics 960 - 1215 MHz
GENERAL DESCRIPTION
The JTDB 25 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 960-1215 MHz. The
device has gold thin-film metallization and diffused ballasting for proven
highest MTTF. The transistor includes input and output prematch for
broadband capability. Low thermal resistance package reduces junction
temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC2
97 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage
BVebo Emitter to Base Voltage
Ic Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
55 Volts
3.5 Volts
5.0 Amps
- 65 to + 200oC
+ 200oC
CASE OUTLINE
55AW, STYLE 1
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
ηc
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 960-1215 MHz
Vcc = 36 Volts
PW = 10 µsec
DF = 40%
F = 1090 MHz
25 Watts
5.0 Watts
7.0 7.5
dB
40 %
5:1
BVebo
BVces
hFE
θjc2
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC - Current Gain
Thermal Resistance
Ie = 5 mA
Ic = 10 mA
Ic = 500 mA,Vce = 5 V
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
Issue A, July 1997
3.5
55
10
Volts
Volts
1.8 oC/W
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet JTDB25.PDF ] | |
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