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FGB3040CS 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FGB3040CS은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 FGB3040CS 자료 제공

부품번호 FGB3040CS 기능
기능 N-Channel Current Sensing Ignition IGBT
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


FGB3040CS 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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FGB3040CS 데이터시트, 핀배열, 회로
www.DataSheet4U.com
May 2007
FGB3040CS
tm
EcoSPARKTM 300mJ, 400V, N-Channel Current Sensing Ignition IGBT
General Description
The FGB3040CS is an lgnition IGBT that offers outstand-
ing SCIS capability along with a ratiometric emitter current
sensing capability. This sensing is based on a emitter
active area ratio of 200:1. The output is provided through a
fourth (sense) lead. This signal provides a current level
that is proportional to the main collector to emitter current.
The effective ratio as measured on the sense lead is a
function of the sense output, the collector current and the
gate to emitter drive voltage.
AD FREE I
Applications
„ Smart Automotive lgnition Coil Driver Circuits
„ ECU Based Systems
„ Distributorless Based Systems
„ Coil on Plug Based Systems
Features
„ SCIS Energy = 300mJ at TJ = 25oC
„ Logic Level Gate Drive
Package
Symbol
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
BVCER Collector to Emitter Breakdown Voltage (IC = 2mA)
BVECS Emitter to Collector Breakdown Voltage (IC = 1mA) (Reverse Battery Condition)
ESCIS25 Self Clamping Inductive Switching Energy (at starting TJ = 25°C)
ESCIS150 Self Clamping Inductive Switching Energy (at starting TJ = 150°C)
IC25 Continuous Collector Current, at VGE = 4.0V, TC = 25°C
IC110
Continuous Collector Current, at VGE = 4.0V, TC = 110°C
VGEM Maximum Continuous Gate to Emitter Voltage
PD
Power Dissipation, at TC = 25°C
Power Dissipation Derating, for TC > 25oC
TJ Operating Junction Temperature Range
TSTG Storage Junction Temperature Range
TL Max. Lead Temp. for Soldering (at 1.6mm from case for 10sec)
TPKG Max. Package Temp. for Soldering (Package Body for 10 sec)
ESD Electrostatic Discharge Voltage, HBM model (100pfd, 1500 ohms)
@2007 Fairchild Semiconductor Corporation
FGB3040CS Rev. A
1
Ratings
430
24
300
170
21
19
±10
150
1
-40 to 175
-40 to 175
300
260
4
Units
V
V
mJ
mJ
A
A
V
W
W/oC
oC
oC
oC
oC
kV
www.fairchildsemi.com




FGB3040CS pdf, 반도체, 판매, 대치품
Typical Performance Curves (Continued)
40
VGE = 8.0V
VGE = 5.0V
30
VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
20
40
VGE = 8.0V
VGE = 5.0V
30
VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
20
10
TJ = -40oC
0
01234
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage
vs. Collector Current
10
TJ = 25oC
0
01234
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 8. Collector to Emitter On-State Voltage
vs. Collector Current
40
VGE = 8.0V
VGE = 5.0V
30
VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
20
10
TJ = 175oC
0
01234
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 9. Collector to Emitter On-State Voltage
vs. Collector Current
25
VGE = 4.0V
20
15
10
5
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE(oC)
Figure 11. DC Collector Current vs. Case
Temperature
40
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
30 VCE = 5V
TJ = -40oC
TJ = 25oC
20
TJ = 175oC
10
0
012345
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 10. Transfer Characteristics
6
2.0
VCE = VGE
1.8 ICE = 1mA
1.6
1.4
1.2
1.0
0.8
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE(oC)
Figure 12. Threshold Voltage vs. Junction
Temperature
FGB3040CS Rev. A
4 www.fairchildsemi.com

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FGB3040CS 전자부품, 판매, 대치품
Test Circuit and Waveforms
BVCER
FGB3040CS Rev. A
7 www.fairchildsemi.com

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관련 데이터시트

부품번호상세설명 및 기능제조사
FGB3040CS

N-Channel Ignition IGBT

Fairchild Semiconductor
Fairchild Semiconductor
FGB3040CS

N-Channel Current Sensing Ignition IGBT

Fairchild Semiconductor
Fairchild Semiconductor

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