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PDF 2STA1962 Data sheet ( Hoja de datos )
| Número de pieza | 2STA1962 | |
| Descripción | High power PNP epitaxial planar bipolar transistor | |
| Fabricantes | ST Microelectronics | |
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2STA1962
High power PNP epitaxial planar bipolar transistor
Preliminary Data
Features
■ High breakdown voltage VCEO > -230V
■ Complementary to 2STC5242
■ Fast-switching speed
■ Typical fT= 30MHz
Application
Audio power amplifier
Description
This device is a PNP transistor manufactured
using new BiT-LA (Bipolar Transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
3
2
1
TO-3P
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
2STA1962
Marking
2STA1962
Package
TO-3P
Packaging
Tube
September 2007
Rev1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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8
1 page  
2STA1962
3 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2STA1962.PDF ] | |
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