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부품번호 | 74AUP1G11 기능 |
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기능 | Low-power 3-input AND gate | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 16 페이지수
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74AUP1G11
Low-power 3-input AND gate
Rev. 01 — 4 September 2007
Product data sheet
1. General description
The 74AUP1G11 provides a low-power, low-voltage single 3-input AND gate.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire VCC range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire
VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial power-down applications using IOFF.
The IOFF circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
2. Features
s Wide supply voltage range from 0.8 V to 3.6 V
s High noise immunity
s Complies with JEDEC standards:
x JESD8-12 (0.8 V to 1.3 V)
x JESD8-11 (0.9 V to 1.65 V)
x JESD8-7 (1.2 V to 1.95 V)
x JESD8-5 (1.8 V to 2.7 V)
x JESD8-B (2.7 V to 3.6 V)
s ESD protection:
x HBM JESD22-A114E Class 3A exceeds 5000 V
x MM JESD22-A115-A exceeds 200 V
x CDM JESD22-C101C exceeds 1000 V
s Low static power consumption; ICC = 0.9 µA (maximum)
s Latch-up performance exceeds 100 mA per JESD 78 Class II
s Inputs accept voltages up to 3.6 V
s Low noise overshoot and undershoot < 10 % of VCC
s IOFF circuitry provides partial Power-down mode operation
s Multiple package options
s Specified from −40 °C to +85 °C and −40 °C to +125 °C
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NXP Semiconductors
74AUP1G11
Low-power 3-input AND gate
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
Min Max Unit
VCC
IIK
VI
IOK
VO
IO
ICC
IGND
Tstg
Ptot
supply voltage
input clamping current VI < 0 V
input voltage
output clamping current VO > VCC or VO < 0 V
output voltage
Active mode and Power-down mode
output current
supply current
VO = 0 V to VCC
ground current
storage temperature
total power dissipation Tamb = −40 °C to +125 °C
−0.5
−50
[1] −0.5
-
[1] −0.5
-
-
−50
−65
[2] -
+4.6
-
+4.6
±50
+4.6
±20
50
-
+150
250
V
mA
V
mA
V
mA
mA
mA
°C
mW
[1] The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For SC-88 packages: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K.
For XSON6 packages: above 45 °C the value of Ptot derates linearly with 2.4 mW/K.
9. Recommended operating conditions
Table 6.
Symbol
VCC
VI
VO
Tamb
∆t/∆V
Recommended operating conditions
Parameter
Conditions
supply voltage
input voltage
output voltage
Active mode
ambient temperature
Power-down mode; VCC = 0 V
input transition rise and fall rate VCC = 0.8 V to 3.6 V
Min Max Unit
0.8 3.6 V
0 3.6 V
0
VCC
V
0 3.6 V
−40 +125 °C
- 200 ns/V
74AUP1G11_1
Product data sheet
Rev. 01 — 4 September 2007
© NXP B.V. 2007. All rights reserved.
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NXP Semiconductors
74AUP1G11
Low-power 3-input AND gate
Table 7. Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min Typ
Tamb = −40 °C to +125 °C
VIH HIGH-level input voltage
VCC = 0.8 V
VCC = 0.9 V to 1.95 V
0.75 × VCC -
0.70 × VCC -
VCC = 2.3 V to 2.7 V
1.6 -
VCC = 3.0 V to 3.6 V
2.0 -
VIL LOW-level input voltage VCC = 0.8 V
--
VCC = 0.9 V to 1.95 V
--
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
--
--
VOH HIGH-level output voltage VI = VIH or VIL
IO = −20 µA; VCC = 0.8 V to 3.6 V
IO = −1.1 mA; VCC = 1.1 V
IO = −1.7 mA; VCC = 1.4 V
IO = −1.9 mA; VCC = 1.65 V
IO = −2.3 mA; VCC = 2.3 V
IO = −3.1 mA; VCC = 2.3 V
IO = −2.7 mA; VCC = 3.0 V
IO = −4.0 mA; VCC = 3.0 V
VCC − 0.11 -
0.6 × VCC -
0.93 -
1.17 -
1.77 -
1.67 -
2.40 -
2.30 -
VOL LOW-level output voltage VI = VIH or VIL
IO = 20 µA; VCC = 0.8 V to 3.6 V
-
-
IO = 1.1 mA; VCC = 1.1 V
--
IO = 1.7 mA; VCC = 1.4 V
--
IO = 1.9 mA; VCC = 1.65 V
--
IO = 2.3 mA; VCC = 2.3 V
--
IO = 3.1 mA; VCC = 2.3 V
--
IO = 2.7 mA; VCC = 3.0 V
IO = 4.0 mA; VCC = 3.0 V
--
--
II
input leakage current
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
-
-
IOFF
∆IOFF
power-off leakage current
additional power-off
leakage current
VI or VO = 0 V to 3.6 V; VCC = 0 V
VI or VO = 0 V to 3.6 V;
VCC = 0 V to 0.2 V
-
-
-
-
ICC
∆ICC
supply current
additional supply current
VI = GND or VCC; IO = 0 A;
VCC = 0.8 V to 3.6 V
VI = VCC − 0.6 V; IO = 0 A;
VCC = 3.3 V
-
[1] -
-
-
[1] One input at VCC − 0.6 V, other input at VCC or GND.
Max Unit
-V
-V
-V
-V
0.25 × VCC V
0.30 × VCC V
0.7 V
0.9 V
-V
-V
-V
-V
-V
-V
-V
-V
0.11 V
0.33 × VCC V
0.41 V
0.39 V
0.36 V
0.50 V
0.36 V
0.50 V
±0.75
µA
±0.75
µA
±0.75
µA
1.4 µA
75 µA
74AUP1G11_1
Product data sheet
Rev. 01 — 4 September 2007
© NXP B.V. 2007. All rights reserved.
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