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부품번호 | DFP640 기능 |
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기능 | N-Channel MOSFET | ||
제조업체 | DnI | ||
로고 | |||
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N-Channel MOSFET
Features
RDS(on) (Max 0.18 )@VGS=10V
Gate Charge (Typical 44nC)
Improved dv/dt Capability
High ruggedness
100% Avalanche Tested
1.Gate
2.Drain
3.Source
General Description
This N-channel enhancement mode field-effect power transistor
using DI semiconductor’s advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) , low gate charge
and high rugged avalanche characteristics.
The TO-220 pkg is well suited for DC-DC converter and S-
Correction in color-monitor system.
DFP640
BVDSS = 200V
RDS(ON) = 0.18 ohm
ID = 18A
TO-220
123
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
200
18
11
72
±30
220
13.5
5.5
135
1.11
- 55 ~ 150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min.
-
-
-
Value
Typ.
-
0.5
-
Max.
0.9
-
62.5
March, 2005. Rev. 0.
Copyright@ D&I Semiconductor Co., Ltd., Korea . All rights reserved.
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
1/7
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DFP640
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
1.2
Fig 8. On-Resistance Variation
vs. Junction Temperature
3.0
2.5
1.1
2.0
1.0 1.5
0.9 Notes :
1. VGS = 0 V
2. ID = 250 µ A
0.8
-100
-50 0 50 100 150
TJ, Junction Temperature [oC]
Fig 9. Maximum Safe Operating Area
200
1.0
0.5
0.0
-100
Notes :
1. VGS = 10 V
2. ID = 9 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Fig 10. Maximum Drain Current
vs. Case Temperature
Operation in This Area
is Limited by R DS(on)
102
101
100 µs
1 ms
10 ms
DC
20
15
10
100
Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
10-1
100
101 102
VDS, Drain-Source Voltage [V]
5
0
103 25 50
Fig 11. Transient Thermal Response Curve
75 100 125
TC' Case Temperature [oC]
150
4/7
100
D = 0 .5
0.2
1 0 -1
0.1
0.05
0 .0 2
0.01
1 0 -2
1 0 -5
N otes :
1 . Z θ JC(t) = 0 .9 0 /W M a x .
2. D uty Factor, D =t1/t2
3 . T JM - T C = P D M * Z θ JC( t)
single pulse
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S quare W ave P ulse D uration [sec]
101
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TO-220 Package Dimension
H
D EI
A
F
B
G
C
J
K
DFP640
L
Ø
M
N
O
D IM E N S IO N A B C D E F G H
M in 6 .1 2 9 .0 0 1 2 .8 8 2 .7 0 1 .2 0 1 5 .1 2 2 .7 0 4 .3 0
m m T yp . 6 .3 2 9 .2 0 1 3 .0 8 2 .8 0 1 .3 0 1 5 .5 2 3 .0 0 4 .5 0
M a x 6 .5 2 9 .4 0 1 3 .2 8 2 .9 0 1 .4 0 1 5 .9 2 3 .3 0 4 .7 0
D IM E N S IO N I J K L M N O Ø
M in 1 .2 5 0 .4 5 2 .3 0
1 .4 2 2 .4 4 4 .8 8
m m T yp . 1 .3 0 0 .5 0 2 .4 0 9 .9 0 1 .5 2 2 .5 4 5 .0 8 3 .6 0
M a x 1 .4 0 0 .6 0 2 .5 0
1 .6 2 2 .6 4 5 .2 8
7/7
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부품번호 | 상세설명 및 기능 | 제조사 |
DFP640 | N-Channel MOSFET | DnI |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |