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부품번호 | DFP30N06 기능 |
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기능 | N-Channel MOSFET | ||
제조업체 | DnI | ||
로고 | |||
www.DataSheet4U.com
DFP30N06
N-Channel MOSFET
Features
Low RDS(on) (0.04 )@VGS=10V
Low Gate Charge (Typical 27nC)
Low Crss (Typical 75pF)
Improved dv/dt Capability
100% Avalanche Tested
Maximum Junction Temperature Range
1.Gate
2.Drain
3.Source
General Description
This N-channel enhancement mode field-effect power transistor
using DI semiconductor’s advanced planar stripe, DMOS technol-
ogy intended for battery operated systems like a DC-DC converter
motor control , ups ,audio amplifier.
Also, especially designed to minimize rds(on) , low gate charge
and high rugged avalanche characteristics.
BVDSS = 60V
RDS(ON) = 0.04 ohm
ID = 30A
TO-220
123
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min.
-
-
-
(Note 1)
(Note 2)
(Note 3)
Value
60
30
21.2
120
±20
430
7.0
79
0.53
- 55 ~ 175
300
Value
Typ.
-
0.5
-
Max.
1.90
-
62.5
Units
V
A
A
A
V
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
June, 2005. Rev.0.
Copyright@ D&I Semiconductor Co., Ltd., All rights reserved.
1/7
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DFP30N06
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
1.2
Fig 8. On-Resistance Variation
vs. Junction Temperature
3.0
2.5
1.1
2.0
1.0 1.5
0.9
0.8
-100
Notes :
1. VGS = 0 V
2. ID = 250 µ A
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
1.0
0.5
0.0
-100
Notes :
1. VGS = 10 V
2. ID = 15 A
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Fig 9. Maximum Safe Operating Area
103
Operation in This Area
is Limited by R DS(on)
102 100 µs
1 ms
10 ms
101
DC
Fig 10. Maximum Drain Current
vs. Case Temperature
35
30
25
20
15
100
10-1
10-1
Notes :
1. TC = 25 oC
2. TJ = 175 oC
3. Single Pulse
100 101
VDS, Drain-Source Voltage [V]
102
10
5
0
25 50 75 100 125
TC' Case Temperature [oC]
Fig 11. Transient Thermal Response Curve
150
175
4/7
100 D=0.5
0.2
0.1
0.05
1 0 -1
0.02
0.01
single pulse
Notes :
1. Z θ JC(t) = 1.9 /W M ax.
2. Duty Factor, D=t1/t2
3 . T JM - T C = P DM * Z θ JC(t)
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, Square W ave Pulse Duration [sec]
101
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DFP30N06
TO-220 Package Dimension
Dim.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Min.
6.12
9.00
12.88
2.70
1.20
15.12
2.70
4.30
1.25
0.45
2.30
1.42
0.75
2.44
4.88
mm
Typ.
6.32
9.20
13.08
2.80
1.30
15.52
3.00
4.50
1.30
0.50
2.40
9.90
1.52
0.85
2.54
5.08
3.60
Max.
6.52
9.40
13.28
2.90
1.40
15.92
3.30
4.70
1.40
0.60
2.50
1.62
0.95
2.64
5.28
Min.
0.241
0.354
0.507
0.106
0.047
0.595
0.106
0.169
0.049
0.018
0.091
0.056
0.030
0.096
0.192
Inch
Typ.
0.249
0.362
0.515
0.110
0.051
0.611
0.118
0.177
0.051
0.020
0.094
0.390
0.060
0.03
0.100
0.200
0.142
Max.
0.257
0.370
0.523
0.114
0.055
0.627
0.130
0.185
0.055
0.024
0.098
0.064
0.037
0.104
0.208
1. Gate
2. Drain
3. Source
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부품번호 | 상세설명 및 기능 | 제조사 |
DFP30N06 | N-Channel MOSFET | DnI |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |