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PDF DBT141-600 Data sheet ( Hoja de datos )
| Número de pieza | DBT141-600 | |
| Descripción | Triacs | |
| Fabricantes | DnI | |
| Logotipo |  |
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DBT141-600
Triacs / Sensitive Gate
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 25 A )
High Commutation dv/dt
Sensitive Gate Triggering 3 Mode
( IGT = 10mA)
Non-isolated Type
Symbol
2.T2
1.T1
3.Gate
BVDRM = 600V
IT(RMS) = 25 A
ITSM = 250 A
TO- 3P
General Description
This device is sensitive gate triggering triac suitable for direct cou-
pling to TTL, HTL, CMOS and application such as various logic
functions, high power AC switching applications, such as fan
speed, lighting controllers and home appliance equipment.
1
23
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(RMS)
ITSM
I2t
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I2t
TC = 86 °C
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
t =10ms
PGM
PG(AV)
IGM
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
TC =85 °C, Pulse width 1.0
Over any 20ms period
tp = 20 , TJ=125°C
VGM
TJ
TSTG
Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
Mass
tp = 20 , TJ=125°C
Ratings
600
25
225/250
260
5.0
0.5
2.0
10
- 40 ~ 125
- 40 ~ 150
6.2
Units
V
A
A
A2s
W
W
A
V
°C
°C
g
July, 2005. Rev. 0
copyright@ D&I Semiconductor Co., Ltd., All rights reserved.
1/5
1 page  
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TO - 3P Package Dimension
C
A
D
B
E
F
G
H
I
DBT141-600
J
Ø
K
L
M
N
O
D IM E N S IO N
M in
m m Typ.
M ax
A
1 9.7 0
1 9.9 0
2 0.1 0
B
1 6 .2 0
1 6 .5 0
1 6 .8 0
C
3 .6 0
3 .8 0
4 .0 0
D IM E N S IO N
M in
m m Typ.
M ax
I JK
1 .2 0 1 5 .4 0 1 .8 0
1 .4 0 1 5 .6 0 2 .0 0
1 .6 0 1 5 .8 0 2 .2 0
DE FGH
3 .3 0 1 8 .5 0 4 .6 0 1 .4 5 0 .5 5
3 .5 0 1 8 .7 0 4 .8 0 1 .5 0 0 .6 0
3 .7 0 1 8 .9 0 5 .0 0 1 .6 5 0 .7 5
LMNO
2 .8 0 0 .8 0
3 .0 0 1 .0 0 5 .4 5 1 0 .9 0
3 .2 0 1 .2 0
5/5
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