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Número de pieza | DTN1A80 | |
Descripción | Triacs | |
Fabricantes | DnI | |
Logotipo | ||
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DTN1A60/80
Triacs / Sensitive Gate
Features
Repetitive Peak Off-State Voltage :
600/800V
R.M.S On-State Current ( IT(RMS)= 1 A )
High Commutation dv/dt
Symbol
1.T1
3.T2
2.Gate
BVDRM = 600V / 800V
IT(RMS) = 1 A
ITSM = 9.1 A
TO-92
General Description
This device is suitable for low power AC switching applica-
tion, phase control application such as fan speed and tem-
perature modulation control, lighting control and static
switching relay where high sensitivity is required in all four
quadrants.
1
2
3
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(RMS)
ITSM
I2t
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I2t for Fusing
Sine wave, 50 to 60 Hz, Gate open
TC = 58 °C, Full Sine wave
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
tp = 10ms
PGM
PG(AV)
IGM
VGM
TJ
TSTG
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
Mass
TC = 58 °C, Pulse width 1.0us
Over any 20ms period
tp = 20us, TJ=125°C
tp = 20us, TJ=125°C
Ratings
600 800
1.0
9.1/10
0.41
1.0
0.1
0.5
6.0
- 40 ~ 125
- 40 ~ 150
0.2
Units
V
A
A
A2s
W
W
A
V
°C
°C
g
April, 2005. Rev.0
copyright @ D&I Semiconductor Co., Ltd., All rights reserved.
1/6
1 page www.DataSheet4U.com
DTN1A60/80
TO-92 Package Dimension
mm Inch
Dim.
Min. Typ. Max. Min. Typ. Max.
A 4.2
0.165
B 3.7 0.146
C 4.43
4.83 0.174
0.190
D 14.07
14.87
0.554
0.585
E 0.4 0.016
F 4.43
4.83 0.174
0.190
G 0.45 0.017
H 2.54
0.100
I 2.54
0.100
J 0.33
0.48 0.013
0.019
A
E
B
F
C
G
1
D2
3
HI
1. T1
2. Gate
3. T2
J
5/6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet DTN1A80.PDF ] |
Número de pieza | Descripción | Fabricantes |
DTN1A80 | Triacs | DnI |
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