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Datasheet FGA25N120AN Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | FGA25N120AN | IGBT, Insulated Gate Bipolar Transistor
FGA25N120AN
IGBT
FGA25N120AN
General Description
Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters an | Fairchild Semiconductor | igbt |
2 | FGA25N120AND | IGBT, Insulated Gate Bipolar Transistor FGA25N120AND
IGBT
FGA25N120AND
General Description
Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible | Fairchild Semiconductor | igbt |
3 | FGA25N120ANTD | NPT Trench IGBT FGA25N120ANTD — 1200 V, 25 A NPT Trench IGBT
November 2013
FGA25N120ANTD
1200 V, 25 A NPT Trench IGBT
Features
• NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V
@ IC = 25 A and TC = 25C • Low Switching Loss: Eoff, typ = 0.96 mJ
@ I | Fairchild Semiconductor | igbt |
4 | FGA25N120ANTDTU | IGBT, Insulated Gate Bipolar Transistor FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT
FGA25N120ANTDTU
1200 V, 25 A NPT Trench IGBT
Features
• NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V
@ IC = 25 A and TC = 25°C • Low Switching Loss: Eoff, typ = 0.96 mJ
@ IC = 25 A and | Fairchild Semiconductor | igbt |
5 | FGA25N120ANTD_F109 | 25A NPT Trench IGBT FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT
April 2013
FGA25N120ANTD/FGA25N120ANTD_F109
1200 V, 25 A NPT Trench IGBT
Features
• NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V
@ IC = 25 A and TC = 25C • Low Swi | Fairchild Semiconductor | igbt |
FGA Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | FGA12-302 | Diode, Rectifier American Microsemiconductor diode | | |
2 | FGA12-502 | Diode, Rectifier American Microsemiconductor diode | | |
3 | FGA120N30D | 300V PDP IGBT
FGA120N30D 300V PDP IGBT
June 2006
FGA120N30D
300V PDP IGBT
Features
• High Current Capability • Low saturation voltage: VCE(sat), Typ = 1.1V@ IC = 25A • High Input Impedance
Description
Employing Unified IGBT Technology, FGA120N30D provides low conduction and switching Fairchild Semiconductor igbt | | |
4 | FGA15N120AN | NPT Igbt FGA15N120AN
IGBT
FGA15N120AN
General Description
Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers solutions for applications such as induction heating (IH), motor control, general purpose inverters and Fairchild Semiconductor igbt | | |
5 | FGA15N120AND | IGBT, Insulated Gate Bipolar Transistor
FGA15N120AND
IGBT
FGA15N120AND
General Description
Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers solutions for applications such as induction heating (IH), motor control, general purpose inverters Fairchild Semiconductor igbt | | |
6 | FGA15N120ANTD | 1200V NPT Trench IGBT
FGA15N120ANTD 1200V NPT Trench IGBT
May 2006
FGA15N120ANTD
1200V NPT Trench IGBT
Features
• NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 1.9V @ IC = 15A and TC = 25°C • Low switching loss: Eoff, typ = 0.6mJ @ IC = 15A Fairchild Semiconductor igbt | | |
7 | FGA15N120ANTDTU | IGBT, Insulated Gate Bipolar Transistor FGA15N120ANTDTU — 1200 V, 15 A NPT Trench IGBT
FGA15N120ANTDTU
1200 V, 15 A NPT Trench IGBT
Features
• NPT Trench Technology, Positive temperature coefficient
• Low Saturation Voltage: VCE(sat), typ = 1.9 V @ IC = 15 A and TC = 25C
• Low Switching Loss: Eoff, typ = 0.6 mJ @ IC = 15 A and Fairchild Semiconductor igbt | |
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Número de pieza | Descripción | Fabricantes | |
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