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Número de pieza | 2SJ280 | |
Descripción | (2SJ280 / 2SJ290) SILICON P-CHANNEL MOS FET | |
Fabricantes | Hitachi Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SJ280 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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2SJ280 L , 2SJ280 S
Silicon P Channel MOS FET
Application
High speed power switching
LDPAK
Features
• Low on–resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from
5 V source
• Suitable for Switching regulator, DC – DC
converter
• Avalanche Ratings
1
4
1
2
2, 4 3
3
4
12
3
1. Gate
2. Drain
3. Source
4. Drain
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
VDSS –60 V
———————————————————————————————————————————
Gate to source voltage
VGSS ±20 V
———————————————————————————————————————————
Drain current
ID –30 A
———————————————————————————————————————————
Drain peak current
ID(pulse)*
–120
A
———————————————————————————————————————————
Body–drain diode reverse drain current
IDR
–30 A
———————————————————————————————————————————
Avalanche current
IAP*** –30 A
———————————————————————————————————————————
Avalanche energy
EAR***
77
mJ
———————————————————————————————————————————
Channel dissipation
Pch**
75
W
———————————————————————————————————————————
Channel temperature
Tch 150 °C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
* PW ≤ 10 µs, duty cycle ≤ 1 %
** Value at Tc = 25 °C
*** Value at Tch = 25 °C, Rg ≥ 50 Ω
1 page www.DataSheet4U.com
2SJ280 L , 2SJ280 S
Body-Drain Diode Reverse
Recovery Time
500
200
100
50
20 di/dt = 50 A/ µs, VGS = 0
Ta = 25°C
10
5
–1 –2
–5 –10 –20 –50 –100
Reverse Drain Current I DR (A)
10000
1000
Typical Capacitance
vs. Drain-Source Voltage
Ciss
Coss
Crss
100
VGS= 0,
f = 1 MHz
10
0 –10 –20 –30
Drain to Source Voltage
–40 –50
VDS (V)
Dynamic Input Characteristics
00
VDD = –10 V
–25 V
–20
VDS
–50 V
–4
–40 VDD= –10 V
–25 V
–60 –50 V
ID = –30 A
–80
–8
–12
VGS
–16
–100
0
40 80 120 160
Gate Charge Qg (nc)
–20
200
1000
500
200
100
Switching Characteristics
td(off)
tf
tr
50 td(on)
20 VGS = –10 V, VDD =: –30 V
PW = 2 µs, duty <=1%
10
–0.5 –1 –2
–5 –10 –20
Drain Current I D (A)
–50
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet 2SJ280.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SJ280 | (2SJ280 / 2SJ290) SILICON P-CHANNEL MOS FET | Hitachi Semiconductor |
2SJ281 | Very High-Speed Switching Applications | Sanyo Semicon Device |
2SJ284 | Very High-Speed Switching Applications | Sanyo Semicon Device |
2SJ285 | Very High-Speed Switching Applications | Sanyo Semicon Device |
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