Datasheet.kr   

IR082HD4C10U-P2 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 IR082HD4C10U-P2은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 IR082HD4C10U-P2 자료 제공

부품번호 IR082HD4C10U-P2 기능
기능 HIGH VOLTAGE HALF BRIDGE
제조업체 International Rectifier
로고 International Rectifier 로고


IR082HD4C10U-P2 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 7 페이지수

미리보기를 사용할 수 없습니다

IR082HD4C10U-P2 데이터시트, 핀배열, 회로
www.DataSheet4U.com
Preliminary Data Sheet No. PD60171-D
IR062HD4C10U-P2
IR082HD4C10U-P2
HIGH VOLTAGE HALF BRIDGE
Features
Output Power IGBT’s in half-bridge configuration
575V rated breakdown voltage
High side gate drive designed for bootstrap
operation
Matched propagation delay for both channels
Independent high and low side output channels
(IR062HD4C10U-P2) or cross-conduction
prevention logic (IR082HD4C10U-P2)
Undervoltage lockout
3.3V, 5V and 15V input logic compatible
Metal heatsink back for improved PD
Description
The IR062HD4C10U-P2 / IR082HD4C10U-P2 are
high voltage, high speed half bridges. Proprietary
HVIC and latch immune CMOS technologies,
along with the power IGBT technology, enable
ruggedized single package construction. The
logic inputs are compatible with standard CMOS
or LSTTL outputs, down to 3.3V logic. The front-
end features an independent high and low side
driver in phase with the logic compatible input
signals. The output features two IGBT’s in a half-
bridge configuration. Propagation delays for the
high and low side power IGBT’s are matched to
simplify use.The device can operate up to 575 volts.
Product Summary
VIN (max)
PD (TA = 25°C)
VCE(ON) typ
Package
575V
3.0W
3.0V
7 Pin
www.irf.com
1




IR082HD4C10U-P2 pdf, 반도체, 판매, 대치품
www.DataSheet4U.com
IR062HD4C10U-P2
IR082HD4C10U-P2
Dynamic Electrical Characteristics
VBIAS (VCC, VBS) = 15V and TA = 25°C unless otherwise specified. Switching time waveform definitions are shown in
figure 2. Refer to IC data sheets (IR2106 and IR2108) for further characteristics.
Symbol
ton
toff
trr
Qrr
Definition
Turn-on propagation delay (see note 2)
Turn-off propagation delay (see note 2)
Reverse recovery time (FRED Diode)
Reverse recovery charge (FRED Diode)
-IR062
-IR082
-IR062
-IR082
Min.
Typ. Max. Units Test Conditions
220 310
Vo = 0V
680 900
257 380
Vo = 575V
220 400
28
ns
IF = 400mA
40 nC
di/dt = 100 A/us
Note 2: Switching times as specified and illustrated in figure 2 are referenced to the VO output voltage.
This is shown as VO in figure 2.
Static Electrical Characteristics
VBIAS (VCC, VBS) = 15V and TA = 25°C unless otherwise specified. The VIN and IIN parameters are referenced to COM.
Symbol
Definition
TA = 25 oC
Min. Typ. Max. Units Test Conditions
VCCUV+
VBSUV+
VCCUV-
VBSUV-
VCC supply undervoltage positive going
threshold
VCC supply undervoltage negative going
threshold
8.0 8.9 9.8 V
V
7.4 8.2 9.0 V
IQCC
Quiescent VCC supply current
0.4 1.0 1.6 mA
IQBO
Quiescent VBO supply current
20 60 150
ILK Offset supply leakage current
@25°C
100
VB = 575V
IINLK
Vin to VO leakage current
@25°C
@150°C
250
1000
µA
VIN = 575V,
VO = 0V
IOLK
VO leakage current
@25°C
@150°C
250
1000
VO = 575V
VIH Logic 1input voltage
VIL Logic 0input voltage
2.7 — —
— — 0.8
V VCC = 10V to 20V
IIN+ Logic 1input bias current
IIN- Logic 0input bias current
20 40
µA
—— 1
VIN = 5V
VCE(on) Collector-to-Emitter saturation voltage
3.0
IC = 400mA
VEC Diode forward voltage
1.2
V
IE = 400mA
VF Bootstrap Diode forward voltage (D1)
1.5
IF = 400mA
4 www.irf.com

4페이지










IR082HD4C10U-P2 전자부품, 판매, 대치품
www.DataSheet4U.com
IR062HD4C10U-P2
IR082HD4C10U-P2
LIN
LIN
HIN
VIN
VO
0
Figure 1. Input/Output Timing Diagram
LIN
LIN
HIN
50%
50%
50%
VO
ton
50%
50%
toff
Figure 2. Switching Time Waveform Definitions
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
Data and specifications subject to change without notice. 1/29/2000
www.irf.com
7

7페이지


구       성 총 7 페이지수
다운로드[ IR082HD4C10U-P2.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
IR082HD4C10U-P2

HIGH VOLTAGE HALF BRIDGE

International Rectifier
International Rectifier

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵