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부품번호 | IR082HD4C10U-P2 기능 |
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기능 | HIGH VOLTAGE HALF BRIDGE | ||
제조업체 | International Rectifier | ||
로고 | |||
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Preliminary Data Sheet No. PD60171-D
IR062HD4C10U-P2
IR082HD4C10U-P2
HIGH VOLTAGE HALF BRIDGE
Features
• Output Power IGBT’s in half-bridge configuration
• 575V rated breakdown voltage
• High side gate drive designed for bootstrap
operation
• Matched propagation delay for both channels
• Independent high and low side output channels
(IR062HD4C10U-P2) or cross-conduction
prevention logic (IR082HD4C10U-P2)
• Undervoltage lockout
• 3.3V, 5V and 15V input logic compatible
• Metal heatsink back for improved PD
Description
The IR062HD4C10U-P2 / IR082HD4C10U-P2 are
high voltage, high speed half bridges. Proprietary
HVIC and latch immune CMOS technologies,
along with the power IGBT technology, enable
ruggedized single package construction. The
logic inputs are compatible with standard CMOS
or LSTTL outputs, down to 3.3V logic. The front-
end features an independent high and low side
driver in phase with the logic compatible input
signals. The output features two IGBT’s in a half-
bridge configuration. Propagation delays for the
high and low side power IGBT’s are matched to
simplify use.The device can operate up to 575 volts.
Product Summary
VIN (max)
PD (TA = 25°C)
VCE(ON) typ
Package
575V
3.0W
3.0V
7 Pin
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IR062HD4C10U-P2
IR082HD4C10U-P2
Dynamic Electrical Characteristics
VBIAS (VCC, VBS) = 15V and TA = 25°C unless otherwise specified. Switching time waveform definitions are shown in
figure 2. Refer to IC data sheets (IR2106 and IR2108) for further characteristics.
Symbol
ton
toff
trr
Qrr
Definition
Turn-on propagation delay (see note 2)
Turn-off propagation delay (see note 2)
Reverse recovery time (FRED Diode)
Reverse recovery charge (FRED Diode)
-IR062
-IR082
-IR062
-IR082
Min.
—
—
—
—
—
—
Typ. Max. Units Test Conditions
220 310
Vo = 0V
680 900
257 380
Vo = 575V
220 400
28 —
ns
IF = 400mA
40 — nC
di/dt = 100 A/us
Note 2: Switching times as specified and illustrated in figure 2 are referenced to the VO output voltage.
This is shown as VO in figure 2.
Static Electrical Characteristics
VBIAS (VCC, VBS) = 15V and TA = 25°C unless otherwise specified. The VIN and IIN parameters are referenced to COM.
Symbol
Definition
TA = 25 oC
Min. Typ. Max. Units Test Conditions
VCCUV+
VBSUV+
VCCUV-
VBSUV-
VCC supply undervoltage positive going
threshold
VCC supply undervoltage negative going
threshold
8.0 8.9 9.8 V
V
7.4 8.2 9.0 V
IQCC
Quiescent VCC supply current
0.4 1.0 1.6 mA
IQBO
Quiescent VBO supply current
20 60 150
ILK Offset supply leakage current
@25°C —
— 100
VB = 575V
IINLK
Vin to VO leakage current
@25°C
@150°C
—
—
— 250
1000 —
µA
VIN = 575V,
VO = 0V
IOLK
VO leakage current
@25°C
@150°C
—
—
— 250
1000 —
VO = 575V
VIH Logic “1” input voltage
VIL Logic “0” input voltage
2.7 — —
— — 0.8
V VCC = 10V to 20V
IIN+ Logic “1” input bias current
IIN- Logic “0” input bias current
— 20 40
µA
—— 1
VIN = 5V
VCE(on) Collector-to-Emitter saturation voltage
— 3.0 —
IC = 400mA
VEC Diode forward voltage
— 1.2 —
V
IE = 400mA
VF Bootstrap Diode forward voltage (D1)
— 1.5 —
IF = 400mA
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IR062HD4C10U-P2
IR082HD4C10U-P2
LIN
LIN
HIN
VIN
VO
0
Figure 1. Input/Output Timing Diagram
LIN
LIN
HIN
50%
50%
50%
VO
ton
50%
50%
toff
Figure 2. Switching Time Waveform Definitions
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
Data and specifications subject to change without notice. 1/29/2000
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
IR082HD4C10U-P2 | HIGH VOLTAGE HALF BRIDGE | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |