Datasheet BMT1417B26 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	BMT1417B26	SILICON MICROWAVE POWER TRANSISTOR BIPOLARICS, INC Part Number BMT1417B26 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base, Class C Package Configuration • High Output Power 26 W @ 1.4 to 1.7 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 4.16 A t • High Gain GPE = 7	Bipolarics	transistor

BMT Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	BMT-04A	BMT-04ABC BMT-04ABC DB LECTRO Inc.	DB Lectro	data
2	BMT-04B	BMT-04ABC BMT-04ABC DB LECTRO Inc.	DB Lectro	data
3	BMT-04C	BMT-04ABC BMT-04ABC DB LECTRO Inc.	DB Lectro	data
4	BMT1417B26	SILICON MICROWAVE POWER TRANSISTOR BIPOLARICS, INC Part Number BMT1417B26 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base, Class C Package Configuration • High Output Power 26 W @ 1.4 to 1.7 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 4.16 A t • High Gain GPE = 7	Bipolarics	transistor
5	BMT1720B20	SILICON MICROWAVE POWER TRANSISTOR BIPOLARICS, INC Part Number BMT1720B20 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base, Class C Package Configuration • High Output Power 20 W @ 1.7 to 2.0 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 3200 mA t • High Gain GPE =	Bipolarics	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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