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Número de pieza | K6R4008V1C | |
Descripción | 512Kx8 Bit High Speed Static | |
Fabricantes | Samsung semiconductor | |
Logotipo | ||
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K6R4008V1C-C/C-L, K6R4008V1C-I/C-P
PRELIMINARY
CMOS SRAM
3Document Title
512Kx8 Bit High Speed Static RAM(3.3V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History
RevNo. History
Rev. 0.0 Initial release with Preliminary.
Rev. 1.0
1.1 Removed Low power Version.
1.2 Removed Data Retention Characteristics.
1.3 Changed ISB1 to 20mA
Rev. 2.0
Relax D.C parameters.
Item
12ns
ICC 15ns
20ns
Previous
160mA
155mA
150mA
Current
195mA
190mA
185mA
Draft Data
Feb. 12. 1999
Mar. 29. 1999
Remark
Preliminary
Preliminary
Aug. 19. 1999 Preliminary
Rev. 3.0
3.1 Delete Preliminary
3.2 Update D.C parameters and 10ns part.
10ns
12ns
15ns
20ns
ICC
-
195mA
190mA
185mA
Previous
Isb
70mA
Isb1
20mA
ICC
155mA
145mA
135mA
125mA
Current
Isb
60mA
Isb1
10mA
Rev. 4.0 Add Low Power-Ver.
Rev. 5.0 Delete 20ns speed bin
Mar. 27. 2000 Final
Apr. 24. 2000
Sep. 24. 2001
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 5.0
September 2001
1 page www.DataSheet4U.com
K6R4008V1C-C/C-L, K6R4008V1C-I/C-P
PRELIMINARY
CMOS SRAM
AC CHARACTERISTICS(TA=0 to 70°C, VCC=3.3±0.3V, unless otherwise noted.)
TEST CONDITIONS*
Parameter
Input Pulse Levels
Input Rise and Fall Times
Input and Output timing Reference Levels
Output Loads
*The above test conditions are also applied at industrial temperature range.
Value
0V to 3V
3ns
1.5V
See below
Output Loads(A)
DOUT
ZO = 50Ω
RL = 50Ω
VL = 1.5V
30pF*
Output Loads(B)
for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ
DOUT
353Ω
+3.3V
319Ω
5pF*
* Capacitive Load consists of all components of the
test environment.
* Including Scope and Jig Capacitance
READ CYCLE*
Parameter
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Chip Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Chip Selection to Power Up Time
Chip Selection to Power DownTime
Symbol
tRC
tAA
tCO
tOE
tLZ
tOLZ
tHZ
tOHZ
tOH
tPU
tPD
K6R4008V1C-10
Min Max
10 -
- 10
- 10
-5
3-
0-
05
05
3-
0-
- 10
* The above parameters are also guaranteed at industrial temperature range.
K6R4008V1C-12
Min Max
12 -
- 12
- 12
-6
3-
0-
06
06
3-
0-
- 12
K6R4008V1C-15
Min Max
15 -
- 15
- 15
-7
3-
0-
07
07
3-
0-
- 15
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
-5-
Rev 5.0
September 2001
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet K6R4008V1C.PDF ] |
Número de pieza | Descripción | Fabricantes |
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