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Número de pieza | AP9T16GH | |
Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Fabricantes | Advanced Power Electronics | |
Logotipo | ||
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Advanced Power
Electronics Corp.
AP9T16GH/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
▼ Capable of 2.5V gate drive
▼ Single Drive Requirement
▼ RoHS Compliant
G
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D
S
BVDSS
RDS(ON)
ID
20V
25mΩ
25A
GD
S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
G
D
S
Rating
20
±16
25
16
90
25
0.2
-55 to 150
-55 to 150
TO-251(J)
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Max.
Value
5
110
Units
℃/W
℃/W
Data and specifications subject to change without notice
200908052-1/4
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet AP9T16GH.PDF ] |
Número de pieza | Descripción | Fabricantes |
AP9T16GH | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP9T16GH-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP9T16GH-HF-3 | N-channel Enhancement-mode Power MOSFET | Advanced Power Electronics |
AP9T16GJ | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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