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PDF 5STB13N6500 Data sheet ( Hoja de datos )
| Número de pieza | 5STB13N6500 | |
| Descripción | Bi-Directional Control Thyristor | |
| Fabricantes | ABB | |
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VSM = 6500 V
IT(AV)M = 1405 A
IT(RMS) = 2205 A
ITSM = 22×103 A
VT0 =
1.2 V
rT = 0.6 mΩ
Bi-Directional Control Thyristor
5STB 13N6500
Doc. No. 5SYA1035-03 May 06
• Two thyristors integrated into one wafer
• Patented free-floating silicon technology
• Designed for energy management and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate.
The electrical and thermal data are valid for one-thyristor-half of the device (unless otherwise stated)
Blocking
Maximum rated values Note 1
Parameter
Max. surge peak blocking
voltage
Max. repetitive peak
reverse blocking voltage
Symbol Conditions
VSM 1) f = 5 Hz, tp = 10 ms
VRM 1) f = 50 Hz, tp = 10 ms
min typ
max Unit
6500 V
5600 V
Critical rate of rise of
commutating voltage
dv/dtcrit Exp. to 3750 V, Tvj = 125°C
Characteristic values
Parameter
Symbol Conditions
min
Max. leakage current
IRM VRM, Tvj = 125 °C
1) VRM is equal to VSM up to Tvj = 110 °C; de-rating of 0.11% per °C applicable for Tj below +5 °C
typ
2000 V/µs
max Unit
400 mA
Mechanical data
Maximum rated values Note 1
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Parameter
Weight
Symbol Conditions
FM
a Device unclamped
a Device clamped
Symbol Conditions
m
min
81
typ
90
max
108
50
100
Unit
kN
m/s2
m/s2
min typ max Unit
2.9 kg
Housing thickness
H
Surface creepage distance DS
Air strike distance
Da
FM = 90 kN, Ta = 25 °C
35 35.6 mm
53 mm
22 mm
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
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5STB 13N6500
Fig. 6 Surge on-state current vs. pulse length.
Half-sine wave.
IG (t)
100 %
90 %
IGM ≈ 2..5 A
IGM
IGon ≥ 1.5 IGT
diG/dt ≥ 2 A/µs
tr ≤ 1 µs
tp(IGM) ≈ 5...20 µs
Fig. 7 Surge on-state current vs. number of pulses.
Half-sine wave, 10 ms, 50Hz.
10 %
tr
diG/dt
tp (IGM)
tp (IGon)
IGon
t
Fig. 8 Recommended gate current waveform
Fig. 9 Max. peak gate power loss
Fig. 10 Recovery charge vs. decay rate of on-state
current
Fig. 11 Peak reverse recovery current vs. decay rate
of on-state current
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1035-03 May 06
page 5 of 7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 5STB13N6500.PDF ] | |
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