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PDF 2SK972 Data sheet ( Hoja de datos )
| Número de pieza | 2SK972 | |
| Descripción | Silicon N-Channel MOS FET | |
| Fabricantes | Hitachi Semiconductor | |
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2SK972
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
– Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter,
power switch and solenoid drive
TO–220AB
2
1
3
123
1. Gate
2. Drain
(Flange)
3. Source
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
VDSS
60
V
———————————————————————————————————————————
Gate to source voltage
VGSS ±20 V
———————————————————————————————————————————
Drain current
ID 25 A
———————————————————————————————————————————
Drain peak current
ID(pulse)*
100
A
———————————————————————————————————————————
Body to drain diode reverse drain current IDR
25 A
———————————————————————————————————————————
Channel dissipation
Pch**
50
W
———————————————————————————————————————————
Channel temperature
Tch 150 °C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
* PW ≤ 10 µs, duty cycle ≤ 1 %
** Value at TC = 25 °C
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2SK972
1,000
500
200
100
Body to Diode Reverse
Recovery Time
di/dt = 50 A/µs, Ta = 25°C
VGS = 0
Pulse Test
50
20
10
0.5
1.0 2
5 10 20
Reverse Drain Current IDR (A)
50
10,000
3,000
1,000
300
100
Typical Capacitance vs.
Drain to Source Voltage
Ciss
VGS = 0
f = 1 MHz
Coss
Crss
30
10
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
100
VDD = 50 V
80 25 V
10 V
60
VDS
VGS
40
20
16
12
8
20 VDD = 50 V
4
25 V
ID = 25 A
10 V
0
0 20 40 60 80 100
Gate Charge Qg (nc)
1000
500
Switching Characteristics
td (off)
200 tf
100
tr
50 VGS = 10 V
PW = 2µs, duty < 1 %
20 td (on)
10
0.5
1.0 2
5 10 20
Drain Current ID (A)
50
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2SK972.PDF ] | |
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