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5236QSCX 데이터시트, 핀배열, 회로
www.DataSheet4U.com
www.fairchildsemi.com
FAN5236
Dual Mobile-Friendly DDR / Dual-output PWM Controller
Features
• Highly flexible dual synchronous switching PWM
controller includes modes for:
– DDR mode with in-phase operation for reduced
channel interference
– 90˚ phase shifted two-stage DDR Mode for reduced
input ripple
– Dual Independent regulators 180° phase shifted
• Complete DDR Memory power solution
– VTT Tracks VDDQ/2
– VDDQ/2 Buffered Reference Output
• Lossless current sensing on low-side MOSFET or
precision over-current using sense resistor
• VCC Under-voltage Lockout
• Converters can operate from +5V or 3.3V or Battery
power input (5 to 24V)
• Excellent dynamic response with Voltage Feed-Forward
and Average Current Mode control
• Power-Good Signal
• Also supports DDR-II and HSTL
• Light load Hysteretic mode maximizes efficiency
• QSOP28, TSSOP28
Applications
• DDR VDDQ and VTT voltage generation
• Mobile PC dual regulator
• Server DDR power
• Hand-Held PC power
General Description
The FAN5236 PWM controller provides high efficiency and
regulation for two output voltages adjustable in the range
from 0.9V to 5.5V that are required to power I/O, chip-sets,
and memory banks in high-performance notebook comput-
ers, PDAs and Internet appliances. Synchronous rectification
and hysteretic operation at light loads contribute to a high
efficiency over a wide range of loads. The hysteretic mode of
operation can be disabled separately on each PWM converter
if PWM mode is desired for all load levels. Efficiency is even
further enhanced by using MOSFET’s RDS(ON) as a current
sense component.
Feed-forward ramp modulation, average current mode con-
trol scheme, and internal feedback compensation provide
fast response to load transients. Out-of-phase operation with
180 degree phase shift reduces input current ripple. The con-
troller can be transformed into a complete DDR memory
power supply solution by activating a designated pin. In
DDR mode of operation one of the channels tracks the out-
put voltage of another channel and provides output current
sink and source capability — features essential for proper
powering of DDR chips. The buffered reference voltage
required by this type of memory is also provided. The
FAN5236 monitors these outputs and generates separate
PGx (power good) signals when the soft-start is completed
and the output is within ±10% of its set point. A built-in
over-voltage protection prevents the output voltage from
going above 120% of the set point. Normal operation is auto-
matically restored when the over-voltage conditions go
away. Under-voltage protection latches the chip off when
either output drops below 75% of its set value after the soft-
start sequence for this output is completed. An adjustable
over-current function monitors the output current by sensing
the voltage drop across the lower MOSFET. If precision cur-
rent-sensing is required, an external current-sense resistor
may optionally be used.
REV. 1.1.7 4/4/03




5236QSCX pdf, 반도체, 판매, 대치품
www.DataSheet4U.com
PRODUCT SPECIFICATION
FAN5236
Pin Definitions (continued)
14 VIN Input Voltage. Normally connected to battery, providing voltage feed-forward to set the
amplitude of the internal oscillator ramp. When using the IC for 2-step conversion from 5V
input, connect through 100K to ground, which will set the appropriate ramp gain and
synchronize the channels 90˚ out of phase.
15 PG1 Power Good Flag. An open-drain output that will pull LOW when VSEN is outside of a
±10% range of the 0.9V reference.
16 PG2 / Power Good 2. When not in DDR Mode: Open-drain output that pulls LOW when the
REF2OUT VOUT is out of regulation or in a fault condition
Reference Out 2. When in DDR Mode, provides a buffered output of REF2. Typically
used as the VDDQ/2 reference.
18 ILIM2 / Current Limit 2. When not in DDR Mode, A resistor from this pin to GND sets the current
REF2 limit.
Reference for reg #2 when in DDR Mode. Typically set to VOUT1 / 2.
28 VCC VCC. This pin powers the chip as well as the LDRV buffers. The IC starts to operate when
voltage on this pin exceeds 4.6V (UVLO rising) and shuts down when it drops below 4.3V
(UVLO falling).
Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life
impaired. Functional operation under these conditions is not implied.
Parameter
VCC Supply Voltage:
VIN
BOOT, SW, ISNS, HDRV
BOOTx to SWx
All Other Pins
Junction Temperature (TJ )
Storage Temperature
Lead Soldering Temperature, 10 seconds
Min.
–0.3
–40
–65
Typ. Max. Units
6.5 V
27 V
33 V
6.5 V
VCC+0.3
V
150 °C
150 °C
300 °C
Recommended Operating Conditions
Parameter
Conditions
Min.
Typ.
Max.
Units
Supply Voltage VCC
4.75 5 5.25 V
Supply Voltage VIN
24 V
Ambient Temperature (TA )
Note 1
–10 85 °C
Note 1: Industrial temperature range (–40 to + 85°C) may be special ordered from Fairchild. Please contact your authorized Fairchild
representative for more information.
4 REV. 1.1.7 4/4/03

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5236QSCX 전자부품, 판매, 대치품
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FAN5236
PRODUCT SPECIFICATION
Typical Applications
VIN (BATTERY)
= 5 to 24V
VCC
+5 28
C4
R3 ILIM1
11
EN1 8
C2 SS1 12
+5
R4
PG1 15
+5 DDR 13
EN2 21
SS2
C3 17
1.25V@10mA
PG2/REF 16
AGND
1
FPWM2
20
VIN
14
PWM 1
BOOT1
6
Q1A
5 HDRV1
4 SW1
Q1B
2 LDRV1
3 PGND2
7 ISNS1
FPWM1 (VOUT1)
9
10 VSEN1
PWM 2
23 BOOT2
Q2A
24 HDRV2
25 SW2
Q2B
27 LDRV2
26 PGND2
22 ISNS2
VSEN2
19
18 ILIM2/REF2
C1 C9
D1
+5
C5
L1
R7
VDDQ
= 2.5V
C6A C6B
R5
R1
D2
C7
L2
+5
VTT =
VDDQ/2
C8A
R6
R2
R8
C8B
Figure 4. DDR Regulator Application
Table 1. DDR Regulator BOM
Description
Qty Ref.
Capacitor 68µf, Tantalum, 25V, ESR 150m
1 C1
Capacitor 10nf, Ceramic
2 C2, C3
Capacitor 68µf, Tantalum, 6V, ESR 1.8
1 C4
Capacitor 150nF, Ceramic
2 C5, C7
Capacitor 180µf, Specialty Polymer 4V, ESR 15m2 C6A, C6B
Capacitor 1000µf, Specialty Polymer 4V, ESR 10m1 C8
Capacitor 0.1µF, Ceramic
2 C9
18.2K, 1% Resistor
3 R1, R2
1.82K, 1% Resistor
1 R6
56.2K, 1% Resistor
2 R3
10K, 5% Resistor
2 R4
3.24K, 1% Resistor
1 R5
1.5K, 1% Resistor
2 R7, R8
Schottky Diode 30V
2 D1, D2
Inductor 6.4µH, 6A, 8.64m
1 L1,
Inductor 0.8µH, 6A, 2.24m
1 L2
Dual MOSFET with Schottky
1 Q1, Q2
DDR Controller
1 U1
Vendor
AVX
Any
AVX
Any
Panasonic
Kemet
Any
Any
Any
Any
Any
Any
Any
Fairchild
Panasonic
Panasonic
Fairchild
Fairchild
Part Number
TPSV686*025#0150
TAJB686*006
EEFUE0G181R
T510E108(1)004AS4115
BAT54
ETQ-P6F6R4HFA
ETQ-P6F0R8LFA
FDS6986S (note 1)
FAN5236
Note 1: Suitable for typical notebook computer application of 4A continuous, 6A peak for VDDQ. If continuous operation above
6A is required use single SO-8 packages for Q1A (FDS6612A) and Q1B (FDS6690S) respectively. Using FDS6690S,
change R7 to 1200. Refer to Power MOSFET Selection, page 15 for more information.
REV. 1.1.7 4/4/03
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5236QSCX

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Fairchild Semiconductor
Fairchild Semiconductor

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