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PDF 2SJ332 Data sheet ( Hoja de datos )
| Número de pieza | 2SJ332 | |
| Descripción | Silicon P-Channel MOS FET | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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2SJ332(L), 2SJ332(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for switching regulator, DC-DC converter
Outline
DPAK-2
4
4
123
D
12 3
1. Gate
G 2. Drain
3. Source
4. Drain
S
November 1996
1 page  
www.DataSheet4U.com
2SJ332(L), 2SJ332(S)
Typical Tranfer Characteristics
–20
–16 V DS = –10 V
Pulse Test
–12
–8
75 °C
Tc = 25 °C
–4 –25 °C
0 –1 –2 –3 –4 –5
Gate to Source Voltage V GS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1.0
Pulse Test
–0.8
–0.6
I D = –10 A
–0.4
–5 A
–0.2 –2 A
0 –2 –4 –6 –8 –10
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.2
0.1
0.05
VGS = –4 V
–10 V
0.02
0.01
–0.5 –1 –2
–5 –10 –20
Drain Current I D (A)
–50
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet 2SJ332.PDF ] | |
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