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Número de pieza | H5N3004P | |
Descripción | Silicon N Channel MOS FET High Speed Power Switching | |
Fabricantes | Renesas Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de H5N3004P (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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H5N3004P
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low leakage current
• High speed switching
• Low gate charge (Qg)
• Avalanche ratings
Outline
TO-3P
ADE-208-1523 (Z)
Rev.0
Apr. 2002
D
G
S
1
2
3
1. Gate
2. Drain (Flange)
3. Source
1 page www.DataSheet4U.com
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
5
Pulse Test
4
3
2 I D = 25 A
15 A
1
5A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
H5N3004P
Static Drain to Source on State Resistance
vs. Drain Current
200
Pulse Test
VGS = 10 V, 15 V
100
50
20
10
12
5 10 20 50 100
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Temperature
200
Pulse Test
V GS = 10 V
160
I D = 25 A
15 A
120
5A
80
40
0
−40 0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
100
50
Tc = −25°C
20
10
5 25°C
2 75°C
1
0.5
0.2
0.2
V DS = 10 V
Pulse Test
0.5 1 2 5 10 20 50 100
Drain Current ID (A)
Rev.0, Apr. 2002, page 5 of 5
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet H5N3004P.PDF ] |
Número de pieza | Descripción | Fabricantes |
H5N3004P | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
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