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PDF PD20015C Data sheet ( Hoja de datos )
| Número de pieza | PD20015C | |
| Descripción | Transistors | |
| Fabricantes | ST Microelectronics | |
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PD20015C
RF power transistor - LdmoST family
Preliminary Data
Features
■ Excellent thermal stability
■ Common source configuration
■ POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V
■ BeO free package
■ ESD protection
■ In compliance with the 2002/95/EC european
directive
Description
The PD20015C is a common source
N-channel, enhancement-mode lateral Field-
Effect RF power transistor. It is designed for high
gain, broadband commercial and industrial
applications. It operates at 13.6 V in common
source mode at frequencies of up to 2 GHz.
PD20015C boasts the excellent gain, linearity and
reliability of ST’s latest LDMOS technology.
PD20015C’s superior linearity performance
makes it an ideal solution for mobile application.
M243
Epoxy sealed
Figure 1. Pin connection
1
3
2
1. Drain
2. Gate
3. Source
Table 1.
Device summary
Order code
PD20015C
Package
M243
Packing
Box
November 2007
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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PD20015C
3 Typical performance
Typical performance
Figure 2.
120
100
Capacitances vs drain voltage
Crss
Coss
Ciss
Figure 3. DC output cpharacteristics
6
Tamb = - 40 °C
5
80
60
40
20
0
0
Freq = 1 MHz
4
3
2
1
0
0 2 4 6 8 10 12
10 20 30 40 50
VDS[V]
Vds (V)
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 5.5V
Vgs = 6.0V
Figure 4. DC output characteristics
6
Tamb = + 20 °C
5
Figure 5. DC output characteristic
6
Tamb = + 60 °C
5
44
3
2
1
0
02
Vgs = 4.0V
4
Vgs = 4.5V
6
VDS[V]
Vgs = 5.0V
8 10
Vgs = 5.5V
12
Vgs = 6.0V
3
2
1
0
024
Vgs = 4.0V
Vgs = 4.5V
6
VDS[V]
Vgs = 5.0V
8 10 12
Vgs = 5.5V
Vgs = 6.0V
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| PDF Descargar | [ Datasheet PD20015C.PDF ] | |
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