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N16T1630C2B 데이터시트 PDF




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부품번호 N16T1630C2B 기능
기능 16Mb Ultra-Low Power Asynchronous CMOS SRAM
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N16T1630C2B 데이터시트, 핀배열, 회로
www.DataSheet4U.com
NanoAmp Solutions, Inc.
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
N16T1630C2B
16Mb Ultra-Low Power Asynchronous CMOS SRAM
1M x 16 bit
Overview
Features
The N16T1630C2B is an integrated memory
device containing a low power 16 Mbit SRAM built
using a self-refresh DRAM array organized as
1,024,576 words by 16 bits. It is designed to be
identical in operation and interface to standard 6T
SRAMS. The device is designed for low standby
and operating current and includes a power-down
feature to automatically enter standby mode. The
device operates with two chip enable (CE1 and
CE2) controls and output enable (OE) to allow for
easy memory expansion. Byte controls (UB and
LB) allow the upper and lower bytes to be
accessed independently and can also be used to
deselect the device. The N16T1630C2B is optimal
for various applications where low-power is critical
such as battery backup and hand-held devices.
The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in JEDEC standard BGA packages
compatible with other standard 1Mb x 16 SRAMs.
• Single Wide Power Supply Range
2.7 to 3.6 Volts
• Very low standby current
100µA at 3.0V (Max)
• Very low operating current
2.0mA at 3.0V and 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Very fast access time
55ns address access option
35ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Green option for BGA package
Product Family
Part Number
Package
Type
Operating
Temperature
N16T1630C2BZ
48 - BGA
N16T1630C2BZ2 Green 48 - BGA
-40oC to +85oC
Pin Configuration (Top View)
Power
Supply (Vcc)
2.7V - 3.6V
Speed
70ns
55ns
Standby
Operating
Current (ISB), Current (Icc),
Max @ 3.0V
Max
100 µA
3 mA @ 1MHz
Pin Description
123456
A LB OE A0 A1 A2 CE2
B I/O8 UB A3 A4 CE1 I/O0
C I/O9 I/O10 A5 A6 I/O1 I/O2
D VSS I/O11 A17 A7 I/O3 VCC
E VCC I/O12 NC A16 I/O4 VSS
F I/O14 I/O13 A14 A15 I/O5 I/O6
G I/O15 A19 A12 A13 WE I/O7
H A18 A8
A9 A10 A11 NC
48 Ball BGA
6 x 8 mm
Pin Name
A0-A19
WE
CE1, CE2
OE
LB
UB
I/O0-I/O15
VCC
VSS
NC
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Data Inputs/Outputs
Power
Ground
Not Connected
(DOC#14-02-007 REV F ECN# 01-1103)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1




N16T1630C2B pdf, 반도체, 판매, 대치품
www.DataSheet4U.com
NanoAmp Solutions, Inc.
Timing Test Conditions
Item
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Operating Temperature
Output Load Circuit
I/O
14.5K
N16T1630C2B
0.1VCC to 0.9 VCC
5ns
0.5 VCC
-40 oC to +85 oC
VCC
14.5K
30 pF
Output Load
(DOC#14-02-007 REV F ECN# 01-1103)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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N16T1630C2B 전자부품, 판매, 대치품
www.DataSheet4U.com
NanoAmp Solutions, Inc.
N16T1630C2B
Timing Waveform of Write Cycle (WE control)
tWC
Address
tAW
tWR
CE1
tCW
CE2
LB, UB
WE
Data In
Data Out
tBW
tAS
High-Z
tWHZ
tWP
tDW tDH
Data Valid
tOW
High-Z
Timing Waveform of Write Cycle (CE1 Control)
tWC
Address
CE1
(for CE2 Control, use
inverted signal)
LB, UB
tAW
tCW
tAS
tBW
tWP
WE
tDW
tWR
tDH
Data In
Data Out
Data Valid
tLZ tWHZ High-Z
(DOC#14-02-007 REV F ECN# 01-1103)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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관련 데이터시트

부품번호상세설명 및 기능제조사
N16T1630C2B

16Mb Ultra-Low Power Asynchronous CMOS SRAM

NanoAmp Solutions
NanoAmp Solutions

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