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PDF AWT6251 Data sheet ( Hoja de datos )

Número de pieza AWT6251
Descripción Linear Power Amplifier Module
Fabricantes ANADIGICS 
Logotipo ANADIGICS Logotipo



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FEATURES
InGaP HBT Technology
High Efficiency: 38%
Low Quiescent Current: 50 mA
Low Leakage Current in Shutdown Mode: <1 µA
VREF = +2.85 V (+2.75 V min over temp)
Optimized for a 50 System
Low Profile Miniature Surface Mount Package:
1.56 mm Max
RoHS Compliant Package Option, 250 oC MSL-3
APPLICATIONS
Dual Mode 3GPP Wireless Handsets
AWT6251
PCS/WCDMA 3.4V/27.5 dBm
Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.3
AWT6251
M7 Package
10 Pin 4 mm x 4 mm x 1.5 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWT6251 meets the increasing demands for
higher output power in 3GPP handsets. The PA module
is optimized for VREF = +2.85 V, a requirement for
compatibility with the Qualcomm® 6250 chipset. The
device is manufactured on an advanced InGaP HBT
MMIC technology offering state-of-the-art reliability,
temperature stability, and ruggedness. Selectable
bias modes that optimize efficiency for different output
power levels, and a shutdown mode with low leakage
current, increase handset talk and standby time. The
self-contained 4 mm x 4 mm x 1.5 mm surface mount
package incorporates matching networks optimized
for output power, efficiency, and linearity in a 50
system.
GND at slug (pad)
VCC 1
10 VCC
RFIN 2
9 GND
GND 3
8 RFOUT
VMODE 4
Bias Control
7 GND
VREF 5
6 GND
Figure 1: Block Diagram
06/2005

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AWT6251 pdf
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APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplifier may be placed in a shutdown
mode by applying logic low levels (see Operating
Ranges table) to both the VREF and VMODE voltages.
AWT6251
Bias Modes
The power amplifier may be placed in either a Low
Bias mode or a High Bias mode by applying the
appropriate logic level (see Operating Ranges table)
to the VMODE voltage. The Bias Control table lists the
recommended modes of operation for various
applications.
APPLICATION
CDMA - low power
CDMA - high power
Shutdown
Table 5: Bias Control
POUT
LEVELS
BIAS
MODE
VREF
VMODE
VCC
<+16dBm
Low +2.85 V +2.85 V > +1.5
>+16 dBm
High +2.85 V 0 V
+3.4
-
Shutdown 0 V
0V
-
VCC1
RF IN
VMODE
VREF
C1
0.01µF
1 VCC
2 RFIN
3 GND
4 VMODE
5 VREF
C2
0.01µF
VCC
GND
RFOUT
GND
10
9
8
7
GND 6
GND
at slug
C3
0.01µF
VCC2
C4
2.2µF ceramic
RF OUT
Figure 3: Application Circuit Schematic
PRELIMINARY DATA SHEET - Rev 1.3
06/2005
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NOTES
AWT6251
PRELIMINARY DATA SHEET - Rev 1.3
06/2005
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