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N01M0818L1A PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 N01M0818L1A
기능 1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 128Kx8 bit
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N01M0818L1A 데이터시트, 핀배열, 회로
www.DataSheet4U.com
NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N01M0818L1A
1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM
128Kx8 bit
Overview
Features
The N01M0818L1A is an integrated memory
device intended for non life-support (Class 1 or
2) medical applications. This device comprises a
1 Mbit Static Random Access Memory organized
as 131,072 words by 8 bits. The device is designed
and fabricated using NanoAmp’s advanced CMOS
technology with reliability inhancements for
medical users. The base design is the same as
NanoAmp’s N01M0818L2A, which has further
reliability processing for life-support (Class 3)
medical applications. The device operates with two
chip enable (CE1 and CE2) controls and output
enable (OE) to allow for easy memory expansion.
The N01M0818L1A is optimal for various
applications where low-power is critical such as
battery backup and hand-held devices. The device
can operate over a very wide temperature range of
-40oC to +85oC and is available in JEDEC
standard packages compatible with other standard
256Kb x 8 SRAMs
Product Family
• Single Wide Power Supply Range
1.4 to 2.3 Volts - STSOP package
• Dual Power Supply - Die Only
1.4 to 2.3 Volts - VCC
1.4 to 3.6 Volts - VCCQ
• Very low standby current
200nA maximum at 2.0V and 37 deg C
• Very low operating current
1 mA at 2.0V and 1µs (Typical)
• Very low Page Mode operating current
0.5mA at 1.0V and 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.2V
• Automatic power down to standby mode
• Special Processing to reduce Soft Error Rate
(SER)
Part Number
Package Type
Operating
Power
Temperature Supply (Vcc)
Speed
N01M0818L1AN 32 - STSOP I
N01M0818L1AD Known Good Die -40oC to +85oC
1.4V - 2.3V
85ns @ 1.7V
150ns @ 1.4V
Standby
Current
(ISB), Max
20 µA
Operating
Current (Icc),
Max
2.5 mA @ 1MHz
Pin Configuration
Pin Descriptions
A11
A9
A8
A13
WE
CE2
A15
VCC
NC
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
N01M0818L1A
STSOP
32 OE
31 A10
30 CE1
29 I/O7
28 I/O6
27 I/O5
26 I/O4
25 I/O3
24 VSS
23 I/O2
22 I/O1
21 I/O0
20 A0
19 A1
18 A2
17 A3
Pin Name
A0-A16
WE
CE1, CE2
OE
I/O0-I/O7
VCCQ
VCC
VSS
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Data Inputs/Outputs
Output Power (die only)
Power
Ground
Stock No. 23205-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1




N01M0818L1A pdf, 반도체, 판매, 대치품
www.DataSheet4U.com
NanoAmp Solutions, Inc.
N01M0818L1A
Power Savings with Page Mode Operation (WE = VIH)
Page Address (A4 - A16)
Word Address (A0 - A3)
CE1
CE2
OE
Word 1
Open page
Word 2
...
Word 16
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power
saving feature.
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open
and 8-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant
bits and addressing the 16 words within the open page, power is reduced to the page mode value which is
considerably lower than standard operating currents for low power SRAMs.
Stock No. 23205-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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N01M0818L1A 전자부품, 판매, 대치품
www.DataSheet4U.com
NanoAmp Solutions, Inc.
N01M0818L1A
Timing Waveform of Write Cycle (WE control)
tWC
Address
tAW
tWR
CE1
tCW
CE2
WE
Data In
Data Out
tAS
High-Z
tWHZ
tWP
tDW tDH
Data Valid
tOW
High-Z
Timing Waveform of Write Cycle (CE1 Control)
tWC
Address
tAW
CE1
(for CE2 Control, use
inverted signal)
tAS
tCW
tWR
WE
Data In
Data Out
tWP
tDW tDH
Data Valid
tLZ tWHZ High-Z
Stock No. 23205-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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부품번호상세설명 및 기능제조사
N01M0818L1A

1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 128Kx8 bit

NanoAmp Solutions
NanoAmp Solutions

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