|
|
|
부품번호 | P5NB80 기능 |
|
|
기능 | STP5NB80 | ||
제조업체 | ST Microelectronics | ||
로고 | |||
전체 9 페이지수
www.DataSheet4U.com
STP5NB80
® STP5NB80FP
N - CHANNEL 800V - 1.8Ω - 5A - TO-220/TO-220FP
PowerMESH™ MOSFET
TYPE
VDSS
RDS(on)
ID
ST P5N B80
ST P5N B80 FP
800 V
800 V
< 2.2 Ω
< 2.2 Ω
5A
5A
s TYPICAL RDS(on) = 1.8 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
VDS Drain-source Voltage (VGS = 0)
V DGR
VGS
ID
ID
IDM(•)
Ptot
Drain- gat e Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (cont inuous) at Tc = 25 o C
Drain Current (cont inuous) at Tc = 100 oC
Drain Current (pulsed)
T otal Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO Insulation Withstand Voltage (DC)
Ts tg Storage T emperature
Tj Max. Operating Junction T emperature
(*) Limited only by maximum temperature allowed
January 1999
Value
Unit
STP5NB80 STP5NB80FP
800 V
800 V
± 30
V
5 5(*) A
3.2
3.2(*)
A
20 20 A
110
0.88
40
0.32
W
W /o C
4 4 V/ns
2000
V
-65 to 150
oC
150 oC
( 1) ISD ≤ 5A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/9
www.DataSheet4U.com
STP5NB80/FP
Thermal Impedance for TO-220
Thermal Impedance for TO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/9
4페이지 www.DataSheet4U.com
DIM.
A
C
D
D1
E
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
STP5NB80/FP
MIN.
4.40
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.4
10.0
13.0
2.65
15.25
6.2
3.5
3.75
TO-220 MECHANICAL DATA
mm
TYP.
1.27
16.4
MAX.
4.60
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.7
10.40
14.0
2.95
15.75
6.6
3.93
3.85
MIN.
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.511
0.104
0.600
0.244
0.137
0.147
inch
TYP.
0.050
0.645
MAX.
0.181
0.051
0.107
0.027
0.034
0.067
0.067
0.203
0.106
0.409
0.551
0.116
0.620
0.260
0.154
0.151
L2
Dia.
L5
L7
L6
L9
L4
P011C
7/9
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ P5NB80.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
P5NB80 | STP5NB80 | ST Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |