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PDF D30NF06L Data sheet ( Hoja de datos )
| Número de pieza | D30NF06L | |
| Descripción | STD30NF06L | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STD30NF06L
N-CHANNEL 60V - 0.022Ω - 35A DPAK/IPAK
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STD30NF06L
60 V <0.028Ω 35 A
s TYPICAL RDS(on) = 0.022Ω
s EXCEPTIONAL dv/dt CAPABILITY
s LOGIC LEVEL GATE DRIVE
s ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
s ADD SUFFIX “-1” FOR ORDERING IN IPAK
s CHARACTERIZATION ORIENTED FOR
AUTOMOTIVE APPLICATIONS
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteris-
tics and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
3
2
1
IPAK
3
1
DPAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Operating Junction Temperature
(q) Pulse width limited by safe operating area
July 2002
Value
60
60
± 20
35
25
140
70
0.46
25
Unit
V
V
V
A
A
A
W
W/°C
V/ns
– 55 to 175
°C
(1) ISD ≤38A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
1/10
1 page  
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Normalized Gate Threshold Voltage vs
Temperature
STD30NF06L
Normalized On Resistance vs Temperature
Normalized Drain-Source Breakdown vs
Temperature
Source-drain Diode Forward Characteristics
5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet D30NF06L.PDF ] | |
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