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PDF EMM5834X Data sheet ( Hoja de datos )

Número de pieza EMM5834X
Descripción Ku / K-Band Power Amplifier MMIC
Fabricantes Eudyna Devices 
Logotipo Eudyna Devices Logotipo



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No Preview Available ! EMM5834X Hoja de datos, Descripción, Manual

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FEATURES
•Output Power; P1dB = 26 dBm (Typ.)
•High Gain; G1dB = 23 dB(Typ.)
•Wide Frequency Band ; 12.7 - 27.0 GHz
•Impedance Matched Zin/Zout = 50
EMM5834X
Ku / K-Band Power Amplifier MMIC
DESCRIPTION
The EMM5834X is a wide band power amplifier MMIC that
contains a four stage amplifier, internally matched, for standard
communications band in 12.7 to 27.0GHz frequency range.
This product is well suited for point-to-point radio applications.
Eudyna’s stringent Quality Assurance Program assures the
highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING
Item
Drain-Source Voltage
Gate-Source Voltage
Input Power
Storage Temperature
Symbol
VDD
VGG
Pin
Tstg
Rating
10
-3
16
-55 to +125
Unit
V
V
dBm
oC
RECOMMENDED OPERATING CONDITIONS
Item Symbol
Drain-Source Voltage
Input Power
Operating Backside Temperature
VDD
Pin
Top
This product should be hermetically packaged.
Conditions
<=6
<=6
-40 to +85
Unit
V
dBm
oC
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25oC)
Item
Frequency Range
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Power-added Efficiency at 1dB G.C.P.
Third Order Intermodulation*
Drain Current at 1dB G.C.P.
Input Return Loss (at Pin=-20dBm)
Output Return Loss (at Pin=-20dBm)
Symbol
Test Conditions
f
P1dB
G1dB
ηadd
IM3
IDD
RLin
RLout
VDD=6V
IDD=300mA typ.
* :f=10MHz ,
2-Tone Test,
Pout=15dBm S.C.L.
Min.
12.7
23
19
-
-26
-
-
-
Limits
Typ.
-
26
23
18
-35
370
-10
-10
Max.
27
-
-
-
-
600
-
-
Unit
GHz
dBm
dB
%
dBc
mA
dB
dB
Note : RF parameter sample size 10pcs. Criteria(accept/reject)=(0/1)
G.C.P.:Gain Compression Point
S.C.L.:Single Carrier Level
ESD
Class 0
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5Kohm)
~ 199V
Edition 1.1
January 2006
1 http://www.eudyna.com/

1 page




EMM5834X pdf
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EMM5834X
Ku / K-Band Power Amplifier MMIC
Output POoutwpuet Pr,owDerr,aDinrainCCuurrrreennt vts.vInsp.uItnPopwuetr Power
by DbyraDrianinCCuurrrernetnt
@f=12.7GHz, VDD=6V
30
28
26
200mA
300mA
400mA
Output Power
24
22
20
18
1100
1000
900
800
700
600
500
16
14
12
10
-12 -10 -8 -6 -4 -2 0
Drain Current
2468
400
300
200
100
10
Input Power [dBm]
Output POoutwpuet Pro, wDerr,aDirnainCCuurrrreentnvts.vInsp.utInPopwuert Power
by DbyrDarianinCCuurrrernet nt
@f=17GHz, VDD=6V
30
28
200mA
300mA
26 400mA Output Power
24
22
20
18
16
14
12
Drain Current
1100
1000
900
800
700
600
500
400
300
200
10 100
-12 -10 -8 -6 -4 -2 0 2 4 6 8 10
Input Power [dBm]
Output PoOuwtpeutrP, oDwrear,iDnraCinuCrurrreennttvsv.sIn.puInt PpouwterPower
by DbryaDinraiCn Cuurrrreennt t
@f=21GHz, VDD=6V
30
28
200mA
300mA Output Power
26 400mA
1100
1000
900
24 800
22 700
20 600
18 DrainCurrent 500
16 400
14 300
12 200
10 100
-12 -10 -8 -6 -4 -2 0 2 4 6 8 10
Input Power [dBm]
Output PoOuwtpeutrP, oDwrear,iDnraCinuCrurrreennttvsv.sIn.puInt PpouwterPower
by DbryaDinraiCn Cuurrrreennt t
@f=27GHz, VDD=6V
30
28
200mA
300mA
26 400mA
1100
1000
900
24 Output Power
800
22 700
20 600
18 DrainCurrent 500
16 400
14 300
12 200
10 100
-12 -10 -8 -6 -4 -2 0 2 4 6 8 10
Input Power [dBm]
5

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EMM5834X arduino
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EMM5834X
Ku / K-Band Power Amplifier MMIC
Chip Outline and Bonding Pad Locations (Dimension in Micro-Meters)
VGG1
0 105 310
1380
1220
RF-IN 1075
VGG2 VGG3
1135 1265
VGG4
2250
2770 2880
1380
1220
1075 RF-OUT
110 110
00
0 105 230
930
2160
2770 2880
VDD1
VDD2
VDD3
VDD4
Chip Size : 2880±30um x 1380±30um
Chip Thickness : 60±20um
Bonding Pad Size : 80um x 80um(VDD, VGG), 160um x 80um (RF)
11

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