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What is TSM1N60?

This electronic component, produced by the manufacturer "Taiwan Semiconductor", performs the same function as "N-Channel Power Enhancement Mode MOSFET".


TSM1N60 Datasheet PDF - Taiwan Semiconductor

Part Number TSM1N60
Description N-Channel Power Enhancement Mode MOSFET
Manufacturers Taiwan Semiconductor 
Logo Taiwan Semiconductor Logo 


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TSM1N60
N-Channel Power Enhancement Mode MOSFET
Pin assignment:
1. Gate
2. Drain
3. Source
VDS = 600V
ID = 1A
RDS (on), Vgs @ 10V, Ids @ 0.6A = 8
General Description
The TSM1N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche
and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are
critical and offer additional and safety margin against unexpected voltage transients.
Features
— Robust high voltage termination
— Avalanche energy specified
— Diode is characterized for use in bridge circuits
Block Diagram
— Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
— IDSS and VDS(on) specified at elevated temperature
Ordering Information
Part No.
TSM1N60CP
TSM1N60CH
Packing
Tape & Reel
Tube
Package
TO-252
TO-251
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Ta = 25 oC
Ta > 25 oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Single Pulse Drain to Source Avalanche Energy
(VDD = 100V, VGS=10V, IAS=2A, L=10mH, RG=25)
Thermal Performance
Symbol
VDS
VGS
ID
IDM
PD
TJ
TJ, TSTG
EAS
Parameter
Lead Temperature (1/8” from case)
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=10sec.
Symbol
TL
Rθja
TSM1N60
1-4
Limit
600V
± 30
1
9
50
0.4
+150
- 55 to +150
20
Unit
V
V
A
A
W
W/oC
oC
oC
mJ
Limit
10
62.5
Unit
S
oC/W
2003/12 rev. E


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for TSM1N60 electronic component.


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TSM1N60The function is N-Channel Power Enhancement Mode MOSFET. Taiwan SemiconductorTaiwan Semiconductor
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