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PDF TSM1N60L Data sheet ( Hoja de datos )
| Número de pieza | TSM1N60L | |
| Descripción | N-Channel Power Enhancement Mode MOSFET | |
| Fabricantes | Taiwan Semiconductor | |
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TSM1N60L
600V N-Channel Power MOSFET
TO-252
TO-251
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
600 12 @ VGS =10V
ID (A)
1
General Description
The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast
recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM
motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe
operating areas are critical and offer additional and safety margin against unexpected voltage transients.
Features
● Robust high voltage termination
● Avalanche energy specified
● Diode is characterized for use in bridge circuits
● Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
● IDSS and VDS(on) specified at elevated temperature
Block Diagram
Ordering Information
Part No.
TSM1N60LCP RO
TSM1N60LCH C5
Package
TO-252
TO-251
Packing
2.5Kpcs / 13” Reel
50pcs / Tube
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a,b
Single Pulse Drain to Source Avalanche Energy
(VDD = 100V, VGS=10V, IAS=2A, L=10mH, RG=25Ω)
Maximum Power Dissipation @Ta = 25 oC
VDS
VGS
ID
IDM
IS
EAS
PD
Operating Junction Temperature
Operating Junction and Storage Temperature Range
TJ
TJ, TSTG
1/7
Limit
600
±30
1
4
1
20
2.5
+150
-55 to +150
Unit
V
V
A
A
A
mJ
W
oC
oC
Version: A07
1 page  
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TSM1N60L
600V N-Channel Power MOSFET
SOT-252 Mechanical Drawing
TO-252 DIMENSION
DIM
MILLIMETERS
MIN MAX
INCHES
MIN MAX
A 2.3BSC
0.09BSC
A1 4.6BSC
0.18BSC
B 6.80 7.20 0.268 0.283
C 5.40
5.60 0.213 0.220
D 6.40
6.65 0.252 0.262
E 2.20 2.40 0.087 0.094
F 0.00 0.20 0.000 0.008
G 5.20
5.40 0.205 0.213
G1 0.75
0.85 0.030 0.033
G2 0.55
0.65 0.022 0.026
H 0.35
0.65 0.014 0.026
I 0.90 1.50 0.035 0.059
J 2.20 2.80 0.087 0.110
K 0.50 1.10 0.020 0.043
L 0.90 1.50 0.035 0.059
M 1.30
1.70 0.051 0.67
Marking Diagram
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L = Lot Code
5/7 Version: A07
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TSM1N60L.PDF ] | |
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