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IHW15N120R 데이터시트 PDF




Infineon Technologies에서 제조한 전자 부품 IHW15N120R은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 IHW15N120R 기능
기능 Reverse Conducting IGBT with monolithic body diode
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IHW15N120R 데이터시트, 핀배열, 회로
www.DataSheet4U.com
Soft Switching Series
IHW15N120R
q
Reverse Conducting IGBT with monolithic body diode
Features:
Powerful monolithic Body Diode with very low forward voltage
Body diode clamps negative voltages
Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications:
Inductive Cooking
Soft Switching Applications
C
G
E
PG-TO-247-3-21
Type
VCE
IC VCE(sat),Tj=25°C Tj,max
IHW20N120R 1200V
Maximum Ratings
20A
1.65V
175°C
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE 1200V, Tj 175°C)
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp 2.5µs, sine halfwave
TC = 100°C, tp 2.5µs, sine halfwave
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Marking
H20R120
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
IFSM
VGE
Ptot
Tj
Tstg
-
Package
PG-TO-247-3-21
Value
1200
30
15
45
45
20
13
30
50
130
120
±20
±25
405
-40...+175
-55...+175
260
Unit
V
A
V
W
°C
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.1 July 06




IHW15N120R pdf, 반도체, 판매, 대치품
www.DataSheet4U.com
40A
Soft Switching Series
TC=80°C
TC=110°C
10A
IHW15N120R
q
tp=1µs
10µs
20µs
50µs
20A
Ic
0A
10Hz
100Hz
1kHz
10kHz 100kHz
Figure 1.
f, SWITCHING FREQUENCY
Collector current as a function of
switching frequency for hard
switching (turn-off)
(Tj 175°C, D = 0.5, VCE = 600V,
VGE = 0/+15V, RG = 54.1)
1A 500µs
5ms
DC
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. IGBT Safe operating area
(D = 0, TC = 25°C,
Tj 175°C;VGE=15V)
350W
300W
250W
200W
150W
100W
50W
0W
25°C 50°C 75°C 100°C 125°C 150°C
40A
30A
20A
10A
0A
25°C 50°C 75°C 100°C 125°C 150°C
Figure 3.
TC, CASE TEMPERATURE
Power dissipation as a function of
case temperature
(Tj 175°C)
Figure 4.
TC, CASE TEMPERATURE
DC Collector current as a function
of case temperature
(VGE 15V, Tj 175°C)
Power Semiconductors
4
Rev. 2.1 July 06

4페이지










IHW15N120R 전자부품, 판매, 대치품
www.DataSheet4U.com
Soft Switching Series
IHW15N120R
q
3mJ
2mJ
Eoff
1mJ
0mJ
0A
5A 10A 15A 20A 25A
IC, COLLECTOR CURRENT
Figure 13. Typical turn-off energy as a
function of collector current
(inductive load, TJ=175°C,
VCE=600V, VGE=0/15V, RG=54,
Dynamic test circuit in Figure E)
2.0 mJ
1.5 mJ
Eoff
1.0 mJ
0.5 mJ
0.0 mJ
30Ω 60Ω 90Ω
RG, GATE RESISTOR
Figure 14. Typical turn-off energy as a
function of gate resisto
(inductive load, TJ=175°C,
VCE=600V, VGE=0/15V, IC=15A,
Dynamic test circuit in Figure E)
1.5mJ
1.0mJ
0.5mJ
2.0mJ
Eoff
1.5mJ
1.0mJ
0.5mJ
Eoff
0.0mJ
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical turn-off energy as a
function of junction temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=15A, RG=54,
Dynamic test circuit in Figure E)
0.0mJ
400V
500V
600V
700V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical turn-off energy as a
function of collector emitter
voltage
(inductive load, TJ=175°C,
VGE=0/15V, IC=15A, RG=54,
Dynamic test circuit in Figure E)
Power Semiconductors
7
Rev. 2.1 July 06

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관련 데이터시트

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IHW15N120E1

IGBT ( Insulated Gate Bipolar Transistor )

Infineon
Infineon
IHW15N120R

Reverse Conducting IGBT with monolithic body diode

Infineon Technologies
Infineon Technologies

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