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IHW15T120 데이터시트 PDF




Infineon Technologies에서 제조한 전자 부품 IHW15T120은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 IHW15T120 기능
기능 IGBT in Trench and Fieldstop technology
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IHW15T120 데이터시트, 핀배열, 회로
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^
Soft Switching Series
IHW15T120
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
Short circuit withstand time – 10µs
Designed for :
- Soft Switching Applications
- Induction Heating
Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in VCE(sat)
Very soft, fast recovery anti-parallel EmConHE diode
Low EMI
Application specific optimisation of inverse diode
C
G
E
Type
IHW15T120
VCE
1200V
IC
15A
VCE(sat),Tj=25°C
1.7V
Tj,max
150°C
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax, Tc=25°C
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp 2.5µs, sine halfwave
TC = 100°C, tp 2.5µs, sine halfwave
Gate-emitter voltage
Short circuit withstand time1)
VGE = 15V, VCC 1200V, Tj 150°C
Power dissipation, TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Marking
H15T120
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
IFSM
VGE
tSC
Ptot
Tj
Tstg
-
Package Ordering Code
TO-247AC Q67040-S4651
Value
1200
30
15
45
45
Unit
V
A
23
13
36
50
130
120
±20
10
113
-40...+150
-55...+150
260
V
µs
W
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2 Mar-04




IHW15T120 pdf, 반도체, 판매, 대치품
www.DataSheet4U.com
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Soft Switching Series
IHW15T120
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
Tj=150°C,
VCC=600V,IC=15A,
VGE= 0 /15V,
RG= 56
Lσ1)=180nH,
Cσ1)=39pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=150°C
VR=800V, IF=9A,
diF/dt=750A/µs
min.
-
-
-
-
-
-
-
-
-
-
Value
typ.
50
35
600
120
2.0
2.1
4.1
210
1600
16.5
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- nC
-A
1) Leakage inductance Lσ an d Stray capacity C σ due to dynamic test circuit in Figure E.
Power Semiconductors
4
Rev. 2 Mar-04

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IHW15T120 전자부품, 판매, 대치품
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td(off)
100ns tf
td(on)
10ns tr
Soft Switching Series
IHW15T120
1µs
td(off)
tf
100ns
10ns
td(on)
tr
1ns
0A
10A 20A
Figure 9.
IC, COLLECTOR CURRENT
Typical switching times as a
function of collector current
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, RG=56,
Dynamic test circuit in Figure E)
1ns
10Ω
35Ω 60Ω 85Ω
RG, GATE RESISTOR
110Ω
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, IC=15A,
Dynamic test circuit in Figure E)
td(off)
100ns
tf
td(on)
tr
10ns
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=15A, RG=56,
Dynamic test circuit in Figure E)
7V
6V
5V max.
typ.
4V
min.
3V
2V
1V
0V
-50°C
0°C
50°C
100°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.6mA)
Power Semiconductors
7
Rev. 2 Mar-04

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IHW15T120

IGBT in Trench and Fieldstop technology

Infineon Technologies
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