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What is IHW30N100R?

This electronic component, produced by the manufacturer "Infineon Technologies", performs the same function as "Reverse Conducting IGBT".


IHW30N100R Datasheet PDF - Infineon Technologies

Part Number IHW30N100R
Description Reverse Conducting IGBT
Manufacturers Infineon Technologies 
Logo Infineon Technologies Logo 


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Soft Switching Series
IHW30N100R
q
Reverse Conducting IGBT with monolithic body diode
Features:
1.5V Forward voltage of monolithic body Diode
Full Current Rating of monolithic body Diode
Specified for TJmax = 175°C
Trench and Fieldstop technology for 1000 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in VCE(sat)
Low EMI
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Applications:
Microwave Oven
Soft Switching Applications
C
G
E
PG-TO-247-3-21
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
IHW30N100R 1000V 30A
1.5V
175°C
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area VCE 1200V, Tj 150°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
Power dissipation, TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Marking
H30R100
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
Ptot
Tj
Tstg
-
Package
PG-TO-247-3-21
Value
1000
60
30
90
90
60
30
90
±20
±25
412
-40...+175
-55...+175
260
Unit
V
A
V
W
°C
°C
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2 July 06

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IHW30N100R equivalent
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Soft Switching Series
IHW30N100R
q
80A VGE=20V
15V
60A 13V
11V
9V
40A
7V
20A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
80A
VGE=20V
60A 15V
13V
11V
40A
9V
7V
20A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
80A
60A
40A
20A TJ=175°C
25°C
0A
0V 2V 4V 6V 8V 10V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
2.5V
IC=60A
2.0V
1.5V
1.0V
IC=30A
IC=15A
0.5V
0.0V
-50°C 0°C 50°C 100°C 150°C
Figure 8.
TJ, JUNCTION TEMPERATURE
Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
Power Semiconductors
5
Rev. 2 July 06


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IHW30N100R electronic component.


Information Total 12 Pages
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Part NumberDescriptionMFRS
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