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IHW30N100T 데이터시트 PDF




Infineon Technologies에서 제조한 전자 부품 IHW30N100T은 전자 산업 및 응용 분야에서
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부품번호 IHW30N100T 기능
기능 Low Loss DuoPack
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IHW30N100T 데이터시트, 핀배열, 회로
www.DataSheet4U.com
Soft Switching Series
IHW30N100T
q
Low Loss DuoPack : IGBT in TrenchStop®and Fieldstop technology
with anti-parallel diode
Features:
1.1V Forward voltage of antiparallel rectifier diode
Specified for TJmax = 175°C
TrenchStop® and Fieldstop technology for 1000 V applications
offers :
G
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in VCE(sat)
Low EMI
Qualified according to JEDEC1 for target applications
PG-TO-247-3-21
Application specific optimisation of inverse diode
Pb-free lead plating; RoHS compliant
C
E
Applications:
Microwave Oven
Soft Switching Applications
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
IHW30N100T 1000V 30A
1.55V
175°C
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area VCE 1200V, Tj 150°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
Power dissipation, TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Marking
H30T100
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
Ptot
Tj
Tstg
-
Package
PG-TO-247-3-21
Value
1000
60
30
90
90
22
12
36
±20
±25
412
-40...+175
-55...+175
260
Unit
V
A
V
W
°C
°C
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.4 May 06




IHW30N100T pdf, 반도체, 판매, 대치품
www.DataSheet4U.com
Soft Switching Series
IHW30N100T
q
90A
80A
70A
60A TC=80°C
50A TC=110°C
40A
30A Ic
20A
10A
0A
100Hz
1kHz
10kHz
100kHz
Figure 1.
f, SWITCHING FREQUENCY
Collector current as a function of
switching frequency for triangular
current (Eon = 0, hard turn-off)
(Tj 175°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 26.9)
tp=1µs
20µs
10A
50µs
100µs
500µs
1A
DC 10ms
0.1A
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj 175°C;
VGE=15V)
400W
350W
300W
250W
200W
150W
100W
50W
0W
25°C 50°C 75°C 100°C 125°C 150°C
Figure 3.
TC, CASE TEMPERATURE
Power dissipation as a function of
case temperature
(Tj 175°C)
50A
40A
30A
20A
10A
0A
25°C
Figure 4.
75°C
125°C
TC, CASE TEMPERATURE
Collector current as a function of
case temperature
(VGE 15V, Tj 175°C)
Power Semiconductors
4
Rev. 2.4 May 06

4페이지










IHW30N100T 전자부품, 판매, 대치품
www.DataSheet4U.com
Soft Switching Series
IHW30N100T
q
5.0mJ
4.0mJ
3.0mJ
Eoff
2.0mJ
1.0mJ
0.0mJ
0A
10A 20A 30A 40A 50A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
VCE = 600V, VGE = 0/15V, RG=26.9,
Dynamic test circuit in Figure E)
3.0mJ
2.0mJ
Eoff
1.0mJ
0.0mJ
20Ω 30Ω 40Ω
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
VCE = 600V, VGE = 0/15V, IC = 30A,
Dynamic test circuit in Figure E)
2.5mJ
2.0mJ
Eoff
1.5mJ
1.0mJ
0.5mJ
0.0mJ
25°C 50°C 75°C 100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE = 600V,
VGE = 0/15V, IC = 30A, RG = 26.9,
Dynamic test circuit in Figure E)
3.0mJ
2.5mJ
Eoff
2.0mJ
1.5mJ
1.0mJ
0.5mJ
0.0mJ
400V
500V
600V
700V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 30A, RG = 26.9,
Dynamic test circuit in Figure E)
Power Semiconductors
7
Rev. 2.4 May 06

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