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PDF J598 Data sheet ( Hoja de datos )
| Número de pieza | J598 | |
| Descripción | P-Channel MOSFET ( Transistor ) - 2SJ598 | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ598
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ598 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
FEATURES
• Low on-state resistance:
RDS(on)1 = 130 mΩ MAX. (VGS = –10 V, ID = –6 A)
RDS(on)2 = 190 mΩ MAX. (VGS = –4.0 V, ID = –6 A)
• Low Ciss: Ciss = 720 pF TYP.
• Built-in gate protection diode
• TO-251/TO-252 package
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ598
TO-251 (MP-3)
2SJ598-Z
TO-252 (MP-3Z)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
–60
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25°C)
VGSS
ID(DC)
ID(pulse)
PT
m20
m12
m30
23
Total Power Dissipation (TA = 25°C)
PT 1.0
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg –55 to +150
IAS –12
EAS 14.4
V
V
A
A
W
W
°C
°C
A
mJ
(TO-251)
(TO-252)
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = –30 V, RG = 25 Ω, VGS = –20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14656EJ4V0DS00 (4th edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
2000, 2001
1 page  
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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
300
Pulsed
250
200 VGS = –4.0 V
150 –10 V
100
50
0 ID = –6 A
−50 0
50 100 150
Tch - Channel Temperature - ˚C
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
1000
Ciss
100 Coss
Crss
10
–0.1
–1 –10
VDS - Drain to Source Voltage - V
–100
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1 1
10 100
IF - Drain Current - A
2SJ598
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
–100 Pulsed
–10 VGS = –10 V
–1 0 V
–0.1
–0.010
–0.5 –1.0
VSD - Source to Drain Voltage - V
–1.5
1000
SWITCHING CHARACTERISTICS
VDD = –30 V
RG = 0 Ω
VGS = –10 V
100
td(off)
10 td(on)
tr
tf
1
–0.1 –1 –10 –100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
–60 –12
ID = –12 A
–50 VGS –10
VDD = –48 V
–30 V
–40
–12 V
–8
–30 –6
–20 –4
–10
0
0
VDS –2
0
2 4 6 8 10 12 14 16
QG - Gate Charge - nC
Data Sheet D14656EJ4V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet J598.PDF ] | |
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