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NT2955 PDF 데이터시트 ( Data , Function )

부품번호 NT2955 기능
기능 Power MOSFET
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NT2955 데이터시트, 핀배열, 회로
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NTD2955
Power MOSFET
−60 V, −12 A, P−Channel DPAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low−voltage, high−
speed switching applications in power supplies, converters, and power
motor controls. These devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer an additional safety margin against unexpected
voltage transients.
Features
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
Designed for Low−Voltage, High−Speed Switching Applications and
to Withstand High Energy in the Avalanche and Commutation Modes
Pb−Free Packages are Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
− Continuous
− Non−repetitive (tp 10 ms)
Drain Current
Drain Current − Continuous @ Ta = 25°C
Drain Current − Single Pulse (tp 10 ms)
Total Power Dissipation @ Ta = 25°C
Operating and Storage Temperature
Range
VDSS
VGS
VGSM
−60
± 20
± 25
ID
IDM
PD
TJ, Tstg
−12
−36
55
−55 to
175
Vdc
Vdc
Vpk
Adc
Apk
W
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak
IL = 12 Apk, L = 3.0 mH, RG = 25 W)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
EAS
RqJC
RqJA
RqJA
216 mJ
2.73 °C/W
71.4
100
Maximum Lead Temperature for Soldering
Purposes, 1/8 in. from case for
10 seconds
TL
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using 1 in pad size
(Cu area = 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu area = 0.412 in2).
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V(BR)DSS
−60 V
RDS(on) TYP
155 mW @ −10 V, 6 A
ID MAX
−12 A
P−Channel
D
G
S
MARKING
DIAGRAMS
4
12
3
4
4
Drain
DPAK
CASE 369C
STYLE 2
1
Gate
2
Drain
3
Source
4
Drain
DPAK−3
CASE 369D
STYLE 2
1
2
3
12 3
Gate Drain Source
NT2955
A
Y
W
Device Code
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2005
May, 2005 − Rev. 8
1
Publication Order Number:
NTD2955/D




NT2955 pdf, 반도체, 판매, 대치품
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NTD2955
1200
VDS = 0 V
1000 Ciss
800 Crss
VGS = 0 V
600
400
TJ = 25°C
Ciss
15
12.5 VDS
10
7.5 QGS
5
QT
QGD
ID = 12 A
TJ = 25°C
60
50
40
VGS
30
20
200
0
10
505
−VGS −VDS
Coss 2.5
10
Crss
10
15 20
25 0 0 2 4 6
0
8 10 12 14 16
QT, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
1000
VDD = −30 V
ID = −12 A
VGS = −10 V
TJ = 25°C
100
tf
tr
td(off)
10 td(on)
15
VGS = 0 V
TJ = 25°C
10
5
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
100
VGS = −15 V
SINGLE PULSE
TC = 25°C
10
100 ms
1 ms
1
10 ms
dc
0.1
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1 10
100
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0
0 0.25 0.5 0.75 1 1.25 1.5 1.75
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage versus Current
IS
tp
di/dt
trr
ta tb
0.25 IS
IS
TIME
Figure 12. Diode Reverse Recovery Waveform
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NT2955 전자부품, 판매, 대치품
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NTD2955
PACKAGE DIMENSIONS
B
VR
DPAK
CASE 369C−01
ISSUE O
−T−
SEATING
PLANE
C
E
S
F
4
1 23
A
K
J
LH
D 2 PL
G 0.13 (0.005) M T
U
Z
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.101
3.0
0.118
5.80
0.228
1.6 6.172
0.063 0.243
INCHES
DIM MIN MAX
A 0.235 0.245
B 0.250 0.265
C 0.086 0.094
D 0.027 0.035
E 0.018 0.023
F 0.037 0.045
G 0.180 BSC
H 0.034 0.040
J 0.018 0.023
K 0.102 0.114
L 0.090 BSC
R 0.180 0.215
S 0.025 0.040
U 0.020 −−−
V 0.035 0.050
Z 0.155 −−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
MILLIMETERS
MIN MAX
5.97 6.22
6.35 6.73
2.19 2.38
0.69 0.88
0.46 0.58
0.94 1.14
4.58 BSC
0.87 1.01
0.46 0.58
2.60 2.89
2.29 BSC
4.57 5.45
0.63 1.01
0.51 −−−
0.89 1.27
3.93 −−−
ǒ ǓSCALE 3:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NT2955

Power MOSFET

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