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부품번호 | BUK9606-55B 기능 |
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기능 | (BUK9x06-55B) N-channel TrenchMOSTM logic level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
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BUK95/96/9E06-55B
N-channel TrenchMOS™ logic level FET
Rev. 03 — 30 November 2004
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology, featuring very low
on-state resistance.
1.2 Features
s TrenchMOS™ technology
s 175 °C rated
s Q101 compliant
s Logic level compatible.
1.3 Applications
s Automotive systems
s Motors, lamps and solenoids
s 12 V and 24 V loads
s General purpose power switching.
1.4 Quick reference data
s EDS(AL)S ≤ 679 mJ
s ID ≤ 75 A
s RDSon = 5.1 mΩ (typ)
s Ptot ≤ 258 W.
2. Pinning information
Table 1: Pinning
Pin Description
Simplified outline
1 gate (G)
2 drain (D)
[1] mb
3 source (S)
mb mounting base;
connected to drain (D)
mb
Symbol
mb D
G
mbb076 S
123
SOT78 (TO-220AB)
2
13
SOT404 (D2-PAK)
[1] It is not possible to make a connection to pin 2 of the SOT404 package.
123
SOT226 (I2-PAK)
www.DataSheet4U.com
Philips Semiconductors
BUK95/96/9E06-55B
N-channel TrenchMOS™ logic level FET
5. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Conditions
Rth(j-mb)
Rth(j-a)
thermal resistance from junction to mounting base Figure 4
thermal resistance from junction to ambient
SOT78 (TO-220AB) and SOT226 (I2-PAK)
vertical in free air
SOT404 (D2-PAK)
mounted on a printed-circuit
board; minimum footprint;
vertical in still air
5.1 Transient thermal impedance
Min Typ Max Unit
- - 0.58 K/W
- 60 - K/W
- 50 - K/W
1
Zth(j-mb)
(K/W)
10-1
δ = 0.5
0.2
0.1
0.05
0.02
10-2
03nh84
P δ = tp
T
single shot
tp t
10-3
T
10-6
10-5
10-4
10-3
10-2
10-1 tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 13519
Product data sheet
Rev. 03 — 30 November 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
4 of 15
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Philips Semiconductors
BUK95/96/9E06-55B
N-channel TrenchMOS™ logic level FET
2.5
VGS(th)
(V)
2.0
1.5
1.0
max
typ
min
03ng52
10-1
ID
(A)
10-2
10-3
10-4
03ng53
min typ max
0.5 10-5
0.0
-60 0 60 120 Tj (°C) 180
10-6
0123
VGS (V)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Tj = 25 °C; VDS = VGS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
200
gfs
(S)
150
03nj62
8000
C
(pF)
6000
Ciss
03nj67
100
50
0
0 20 40 60 80
ID (A)
Tj = 25 °C; VDS = 25 V
Fig 11. Forward transconductance as a function of
drain current; typical values.
4000
Coss
2000
Crss
0
10-1 1 10 VDS (V) 102
VGS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 13519
Product data sheet
Rev. 03 — 30 November 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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BUK9606-55A | TrenchMOS transistor Logic level FET | NXP Semiconductors |
BUK9606-55A | TrenchMOS logic level FET | NXP Semiconductors |
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